用于均质互补逻辑电路的单过渡金属二硫化碳（TMD）晶体管中的极性控制<a href="#fn1" title="提供电子补充信息（ESI）。参见DOI：10.1039 / c9nr03441b">†</a>,Nanoscale

当前位置： X-MOL 学术 › Nanoscale › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

用于均质互补逻辑电路的单过渡金属二硫化碳（TMD）晶体管中的极性控制 †
Nanoscale ( IF 5.8 ) Pub Date : 2019-06-27 00:00:00 , DOI: 10.1039/c9nr03441b
Jaewoo Shim _{1,

2,

3,

4,

5} , Sung woon Jang _{1,

2,

3,

4} , Ji-Hye Lim _{1,

2,

3,

4} , Hyeongjun Kim _{1,

2,

3,

4} , Dong-Ho Kang _{1,

2,

3,

4,

6} , Kwan-Ho Kim _{1,

2,

3,

4} , Seunghwan Seo _{1,

2,

3,

4} , Keun Heo _{1,

2,

3,

4} , Changhwan Shin _{1,

2,

3,

4} , Hyun-Yong Yu _{4,

7,

8,

9} , Sungjoo Lee _{2,

3,

4,

10} , Dae-Hong Ko _{4,

11,

12,

13} , Jin-Hong Park _{1,

2,

3,

4,

10}

Affiliation

近来，已经进行了各种尝试来证明过渡金属二卤化二硫（TMD）晶体管用于数字逻辑电路的可行性。互补反相器电路是逻辑电路的基本组成部分，是在早期的工作中通过异质集成在不同TMD材料上制造的n沟道和p沟道晶体管实现的。随后，为简化电路设计和制造过程，使用双极性晶体管在单TMD材料上构建了互补反相器。然而，在双极器件中从电子传导状态到空穴传导状态的连续转变导致高漏电流的问题。在这里，我们报告了一种极性可控的TMD晶体管，它既可以用作n沟道晶体管也可以用作p沟道晶体管，漏电流仅为几皮安。只需转换漏极电压的符号即可切换器件极性。这是因为类似金属的二碲化钨（WTe₂）将低载流子浓度用作漏极触点，随后可以在钯/二硒化钨（WSe₂）结处选择性注入载流子。此外，通过使用极性可控晶体管的工作原理，我们演示了在单个TMD通道材料（WSe₂）上的互补逆变器电路，该电路的静态功耗非常低，仅为数百皮瓦。最后，通过介绍三级环形振荡器的正确操作，我们确认了这种极性可控晶体管在向更复杂的逻辑电路扩展的能力。

"点击查看英文标题和摘要"

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits†

Recently, there have been various attempts to demonstrate the feasibility of transition metal dichalcogenide (TMD) transistors for digital logic circuits. A complementary inverter circuit, which is a basic building block of a logic circuit, was implemented in earlier works by heterogeneously integrating n- and p-channel transistors fabricated on different TMD materials. Subsequently, to simplify the circuit design and fabrication process, complementary inverters were constructed on single-TMD materials using ambipolar transistors. However, continuous transition from the electron-conduction to the hole-conduction state in the ambipolar devices led to the problem of a high leakage current. Here, we report a polarity-controllable TMD transistor that can operate as both an n- and a p-channel transistor with a low leakage current of a few picoamperes. The device polarity can be switched simply by converting the sign of the drain voltage. This is because a metal-like tungsten ditelluride (WTe₂) with a low carrier concentration is used as a drain contact, which subsequently allows selective carrier injection at the palladium/tungsten diselenide (WSe₂) junction. In addition, by using the operating principle of the polarity-controllable transistor, we demonstrate a complementary inverter circuit on a single TMD channel material (WSe₂), which exhibits a very low static power consumption of a few hundred picowatts. Finally, we confirm the expandability of this polarity-controllable transistor toward more complex logic circuits by presenting the proper operation of a three-stage ring oscillator.

更新日期：2019-06-27

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南