Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission,ACS Omega

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Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission
ACS Omega ( IF 3.7 ) Pub Date : 2019-06-24 00:00:00 , DOI: 10.1021/acsomega.9b01027
Xiaxia Liao _{1,

2} , Ah Reum Jeong ₁ , Regan G Wilks _{1,

3} , Sven Wiesner ₁ , Marin Rusu ₁ , Roberto Félix ₁ , Ting Xiao ₁ , Claudia Hartmann ₁ , Marcus Bär _{1,

3,

3,

4}

Affiliation

The chemical and electronic structure of MoO₃ thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO₃. At moderate temperatures (120–200 °C), we find spectral evidence for the formation of Mo⁵⁺ and at higher temperatures (>165 °C) also of Mo⁴⁺ states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states. A clear relation between annealing temperature and the induced changes in the chemical and electronic structure suggests this approach as a route for deliberate tuning of MoO₃ thin-film properties.

中文翻译：

由硬 X 射线光电发射监测的原位退火引起的 MoO3 薄膜特性的可调性

MoO ₃薄膜的化学和电子结构通过基于同步加速器的硬X射线光电子能谱在从室温到310°C的退火过程中进行监测。 Mo 3d 和 O 1s 的彩色编码二维强度图以及价带最大值 (VBM) 光谱显示了退火引起的变化的演变。 Mo 3d 和O 1s 光谱的加宽表明MoO ₃的还原。在中等温度 (120–200 °C) 下，我们发现了 Mo ^{5+ 态}形成的光谱证据，在较高温度 (>165 °C) 下也发现了 Mo ⁴⁺态形成的光谱证据。这些状态可能与高于 VBM 的光谱强度有关，该光谱强度归因于 O 空位引起的带隙状态，该带隙状态是由最初未占据的 Mo 4d 衍生状态的部分填充引起的。退火温度与化学和电子结构的诱发变化之间的清晰关系表明，这种方法可以作为有意调整MoO ₃薄膜特性的途径。

更新日期：2019-06-24

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