Photothermal and Joule-Heating-Induced Negative-Photoconductivity-Based Ultraresponsive and Near-Zero-Biased Copper Selenide Photodetectors,ACS Applied Electronic Materials

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Photothermal and Joule-Heating-Induced Negative-Photoconductivity-Based Ultraresponsive and Near-Zero-Biased Copper Selenide Photodetectors
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2019-07-05 , DOI: 10.1021/acsaelm.9b00174
Subhash C. Singh _{1,

2} , Yao Peng ₁ , James Rutledge ₁ , Chunlei Guo _{1,

2}

Affiliation

The development of a highly responsive, near-zero-biased broadband photo and thermal detector is required for self-powered night vision security, imaging, remote sensing, and space applications. Photothermal-effect-based photodetectors operate on the principle of photothermal heating and can sense radiation from the UV to IR spectral region for broadband photo and thermal detection. This type of photodetector is highly desirable, but few materials have been shown to meet the stringent requirements including broadband optical/thermal absorption with high absorption coefficients, low thermal conductivity, and a large Seebeck coefficient. Here, we demonstrate ultraresponsive, near-zero-biased photodetectors made of mass-producible Cu_2±xSe nanomaterials. Our photodetectors are fabricated with powder pressing and operate on the principle of negative photoconductivity that utilizes the Seebeck effect under the combined effects of Joule and photothermal heating to detect extremely low levels of broadband optical radiation. We show that copper-deficient Cu_1.8Se and selenium-deficient Cu_2.5Se copper selenide materials have negative photoconductivity. However, stochiometric Cu₂Se copper selenide shows positive photoconductivity. We demonstrate that a photodetector made from the Ag:n⁺-Cu_1.8Se:p-Ag:n⁺ system has the best photoresponse and generates a 520 mA/mm negative photocurrent and a high responsivity of 621 A/W under low bias.

中文翻译：

基于光热和焦耳加热的负光导性超响应和近零偏压硒化铜光电探测器

对于自供电夜视安全，成像，遥感和太空应用，需要开发一种高响应度，接近零偏置的宽带照片和热探测器。基于光热效应的光电探测器基于光热加热原理工作，可以感应从UV到IR光谱区域的辐射，以进行宽带光和热检测。这种光检测器是非常需要的，但是很少有材料能够满足严格的要求，包括具有高吸收系数，低热导率和大塞贝克系数的宽带光学/热吸收。在这里，我们展示了由可大量生产的Cu _2±_x制成的超响应，接近零偏置的光电探测器硒纳米材料。我们的光电探测器采用粉末压制工艺制造，并在负光电导原理下运行，该负光电导在焦耳和光热加热共同作用下利用塞贝克效应来检测极低水平的宽带光辐射。我们表明，缺铜的Cu _1.8 Se和缺硒的Cu _2.5 Se硒化铜材料具有负的光电导性。但是，化学计量的Cu ₂ Se硒化铜显示出正的光电导性。我们证明了由Ag：n ⁺ -Cu _1.8 Se：p-Ag：n ⁺制成的光电探测器该系统具有最佳的光响应，并在低偏置下产生520 mA / mm的负光电流和621 A / W的高响应度。

更新日期：2019-07-07

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