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Defect Structure and Photovoltaic Characteristics of Internally Stacked CuO/Cu2O Photoactive Layer Prepared by Electrodeposition and Heating
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2019-06-18 00:00:00 , DOI: 10.1021/acsaem.9b00514 Masanobu Izaki 1 , Kazuma Fukazawa 1 , Kenta Sato 1 , Pei Loon Khoo 1 , Masakazu Kobayashi 1 , Akihisa Takeuchi 2 , Kentaro Uesugi 2
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2019-06-18 00:00:00 , DOI: 10.1021/acsaem.9b00514 Masanobu Izaki 1 , Kazuma Fukazawa 1 , Kenta Sato 1 , Pei Loon Khoo 1 , Masakazu Kobayashi 1 , Akihisa Takeuchi 2 , Kentaro Uesugi 2
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The internally stacked CuO/Cu2O photoactive layers were prepared by electrodeposition of the Cu2O layer followed by heating in air. The 1.4 eV-p-CuO layer was heteroepitaxially grown on the Cu2O layer accompanied by the formation of nanopores by heating at 573 K, and both the CuO and Cu2O layers possessed excellent semiconductor qualities with band-edge emission in the visible light region. The internally stacked CuO/Cu2O photoactive layer revealed the photovoltaic performance in a corresponding wide photon energy range due to the utilization of the photovoltaic ability for both the CuO and Cu2O layers by applying a bias voltage. Heating at 673 K induced transfer of the thickened CuO layer to the polycrystalline phase and coalescence of nanopores, resulting in the disappearance of the light emission and photovoltaic performance, irrespective of the bias voltage. The crystal and semiconductor qualities for both the CuO and Cu2O layers affected the photovoltaic performance for the internally stacked CuO/Cu2O photoactive layer.
中文翻译：
电沉积和加热制备的内部堆叠式CuO / Cu 2 O光敏层的缺陷结构和光伏特性
通过电沉积Cu 2 O层然后在空气中加热来制备内部堆叠的CuO / Cu 2 O光敏层。1.4 eV-p-CuO层在Cu 2 O层上异质外延生长，并通过在573 K下加热形成纳米孔，并且CuO和Cu 2 O层均具有出色的半导体质量，在可见光中具有带边发射轻区域。内部堆叠的CuO / Cu 2 O光敏层由于利用了CuO和Cu 2的光伏能力，因此在相应的宽光子能量范围内显示了光伏性能通过施加偏置电压来形成O层。在673 K下加热会导致增厚的CuO层转移到多晶相并形成纳米孔，从而与偏压无关，导致发光和光伏性能消失。CuO和Cu 2 O层的晶体和半导体质量都会影响内部堆叠的CuO / Cu 2 O光敏层的光伏性能。
更新日期：2019-06-18
中文翻译：
电沉积和加热制备的内部堆叠式CuO / Cu 2 O光敏层的缺陷结构和光伏特性
通过电沉积Cu 2 O层然后在空气中加热来制备内部堆叠的CuO / Cu 2 O光敏层。1.4 eV-p-CuO层在Cu 2 O层上异质外延生长，并通过在573 K下加热形成纳米孔，并且CuO和Cu 2 O层均具有出色的半导体质量，在可见光中具有带边发射轻区域。内部堆叠的CuO / Cu 2 O光敏层由于利用了CuO和Cu 2的光伏能力，因此在相应的宽光子能量范围内显示了光伏性能通过施加偏置电压来形成O层。在673 K下加热会导致增厚的CuO层转移到多晶相并形成纳米孔，从而与偏压无关，导致发光和光伏性能消失。CuO和Cu 2 O层的晶体和半导体质量都会影响内部堆叠的CuO / Cu 2 O光敏层的光伏性能。
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