Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching
ACS Nano ( IF 15.8 ) Pub Date : 2019-06-17 00:00:00 , DOI: 10.1021/acsnano.9b01709 Hsien-Chih Huang 1 , Munho Kim 1 , Xun Zhan 2 , Kelson Chabak 3 , Jeong Dong Kim 1 , Alexander Kvit 4 , Dong Liu 5 , Zhenqiang Ma 4, 5 , Jian-Min Zuo 2 , Xiuling Li 1
ACS Nano ( IF 15.8 ) Pub Date : 2019-06-17 00:00:00 , DOI: 10.1021/acsnano.9b01709 Hsien-Chih Huang 1 , Munho Kim 1 , Xun Zhan 2 , Kelson Chabak 3 , Jeong Dong Kim 1 , Alexander Kvit 4 , Dong Liu 5 , Zhenqiang Ma 4, 5 , Jian-Min Zuo 2 , Xiuling Li 1
Affiliation
|
β-Ga2O3, with a bandgap of ∼4.6–4.9 eV and readily available bulk substrates, has attracted tremendous interest in the wide bandgap semiconductor community. Producing high aspect ratio β-Ga2O3 3D nanostructures without surface damage is crucial for next-generation power electronics. However, most wet etching methods can only achieve very limited aspect ratios, while dry etch usually damages the surface due to high energy ions. In this work, we demonstrate the formation of β-Ga2O3 fin arrays on a (010) β-Ga2O3 substrate by metal-assisted chemical etching (MacEtch) with high aspect ratio and sidewall surfaces with excellent quality. The etching was found to be strongly crystal orientation dependent, and three kinds of vertical structures were formed after MacEtch. The Schottky barrier height (SBH) between Pt and various MacEtch-produced β-Ga2O3 surfaces and sidewalls was found to decrease as the aspect ratio of the β-Ga2O3 vertical structure increased. This could be attributed to the different amount of oxygen lost at the surface after etching, as indicated by the XPS and TEM examination. Very little hysteresis was observed in the capacitance–voltage characteristics for the 3D Pt/Al2O3/β-Ga2O3 MOS capacitor structures, and the extracted interface trap density was as small as 2.73 × 1011 cm–2 eV–1, comparable to or lower than that for unetched planar β-Ga2O3 surfaces.
中文翻译：
高纵横比的β-Ga 2 ö 3个翅片阵列与由逆金属辅助化学蚀刻低界面电荷密度
的β-Ga 2 ö 3，与~4.6-4.9电子伏特的带隙和容易获得的体衬底，吸引在宽带隙半导体社区极大的兴趣。制造高纵横比的β-Ga 2 ö 3 3D纳米结构没有表面损伤是用于下一代功率电子至关重要。但是，大多数湿蚀刻方法只能获得非常有限的纵横比，而干蚀刻通常会由于高能离子而损坏表面。在这项工作中，我们证明形成的β-Ga 2个ö 3上的（010）翅片阵列的β-Ga 2 ö 3通过具有高长宽比的金属辅助化学蚀刻（MacEtch）制成的基板以及具有出色质量的侧壁表面。发现该蚀刻强烈依赖于晶体取向，并且在MacEtch之后形成了三种垂直结构。Pt和各种MacEtch生产的β-Ga之间的肖特基势垒高度（SBH）2个ö 3被发现表面和侧壁为随着的β-Ga的纵横比2 ö 3垂直结构增加。如XPS和TEM检查所示，这可归因于蚀刻后表面上损失的氧气量不同。在3D Pt / Al 2 O 3的电容-电压特性中观察到的磁滞几乎没有/的β-Ga 2 ö 3 MOS电容器结构，并且将所提取界面陷阱密度小至2.73×10 11厘米-2 eV的-1，相当或比用于未蚀刻平面的β-Ga降低2层ö 3的表面。
更新日期：2019-06-17
中文翻译：
高纵横比的β-Ga 2 ö 3个翅片阵列与由逆金属辅助化学蚀刻低界面电荷密度
的β-Ga 2 ö 3，与~4.6-4.9电子伏特的带隙和容易获得的体衬底，吸引在宽带隙半导体社区极大的兴趣。制造高纵横比的β-Ga 2 ö 3 3D纳米结构没有表面损伤是用于下一代功率电子至关重要。但是，大多数湿蚀刻方法只能获得非常有限的纵横比，而干蚀刻通常会由于高能离子而损坏表面。在这项工作中，我们证明形成的β-Ga 2个ö 3上的（010）翅片阵列的β-Ga 2 ö 3通过具有高长宽比的金属辅助化学蚀刻（MacEtch）制成的基板以及具有出色质量的侧壁表面。发现该蚀刻强烈依赖于晶体取向，并且在MacEtch之后形成了三种垂直结构。Pt和各种MacEtch生产的β-Ga之间的肖特基势垒高度（SBH）2个ö 3被发现表面和侧壁为随着的β-Ga的纵横比2 ö 3垂直结构增加。如XPS和TEM检查所示，这可归因于蚀刻后表面上损失的氧气量不同。在3D Pt / Al 2 O 3的电容-电压特性中观察到的磁滞几乎没有/的β-Ga 2 ö 3 MOS电容器结构，并且将所提取界面陷阱密度小至2.73×10 11厘米-2 eV的-1，相当或比用于未蚀刻平面的β-Ga降低2层ö 3的表面。
京公网安备 11010802027423号