In this study, three different series of vinyl copolymers bearing electron donating and accepting moieties in various compositions and their homopolymers were synthesized by reversible addition-fragmentation chain transfer polymerizations. They all were soluble in conventional organic solvents and gave good quality nanoscale films via conventional coating and drying processes. They were thermally stable up to 242 °C or higher temperatures. Their optical and electrochemical properties as well as electron densities and mass densities were measured. The nanoscale film morphologies were further examined by synchrotron grazing incidence X-ray scattering analysis; they were confirmed as amorphous or structurally-featureless films. All polymers exhibited various electrical properties depending on the polymers and film thicknesses. In particular, only p-type digital memory characteristics were observed within certain film thickness windows, regardless of electron-donating polymers, electron-accepting polymers, and their copolymers. Moreover, all polymers revealed high memory performances with low switching-ON voltages, high ON/OFF current ratios and high reliabilities even in air ambient conditions. The memory behaviors followed a combination of hopping conduction and trap-limited space charge limited conduction in the OFF-state and hopping conduction in the ON-state. However, the film thickness window showing digital memory characteristics was significantly dependent upon the compositions of electron donating and accepting moieties. Higher fraction of electron-donating moieties provided wider film thickness window for digital memory. For this aspect, the electron-accepting polymers could gain great benefits by incorporating electron-donating moieties, whereas the electron-donating polymers could attain only negative impacts via the addition of electron-accepting moieties. Overall, all polymers of this study are suitable for the low-cost mass production of high-performance programmable memory devices.

在这项研究中，通过可逆的加成-断裂链转移聚合反应合成了三种不同系列的乙烯基共聚物，它们在各种组成中带有给电子和受电子部分，以及它们的均聚物。它们都可溶于常规有机溶剂中，并通过常规涂布和干燥过程获得了高质量的纳米级薄膜。它们在高达242°C或更高的温度下具有热稳定性。测量了它们的光学和电化学性质以及电子密度和质量密度。通过同步加速器掠入射X射线散射分析进一步检查了纳米级薄膜的形貌。它们被确认为无定形或无结构特征的薄膜。根据聚合物和膜的厚度，所有聚合物均表现出各种电性能。特别是只有p无论给电子聚合物，受电子聚合物及其共聚物如何，都在一定的膜厚窗口内观察到类型的数字存储特性。此外，即使在空气环境下，所有聚合物都具有高的存储性能，低的接通电压，高的开/关电流比和较高的可靠性。存储器行为遵循OFF状态下跳变传导和陷阱限制空间电荷受限传导以及ON状态下的跳变传导的结合。但是，显示数字存储特性的膜厚窗口显着取决于给电子和接受电子部分的组成。给电子部分的分数越高，则数字存储器的膜厚度窗口越宽。在这方面，通过结合给电子部分，电子接受聚合物可以获得很大的好处，而通过添加电子接受部分，给电子聚合物只能获得负面影响。总体而言，本研究的所有聚合物都适合于低成本批量生产高性能可编程存储设备。