当前位置：
X-MOL 学术
›
Adv. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics
Advanced Materials ( IF 27.4 ) Pub Date : 2019-06-14 , DOI: 10.1002/adma.201901578 Qingyuan He 1 , Pengji Li 1 , Zhiheng Wu 1 , Bin Yuan 2 , Zhongtao Luo 1 , Wenlong Yang 1 , Jie Liu 1 , Guoqin Cao 1, 3 , Wenfeng Zhang 4 , Yonglong Shen 1 , Peng Zhang 1 , Suilin Liu 5 , Guosheng Shao 1 , Zhiqiang Yao 1
Advanced Materials ( IF 27.4 ) Pub Date : 2019-06-14 , DOI: 10.1002/adma.201901578 Qingyuan He 1 , Pengji Li 1 , Zhiheng Wu 1 , Bin Yuan 2 , Zhongtao Luo 1 , Wenlong Yang 1 , Jie Liu 1 , Guoqin Cao 1, 3 , Wenfeng Zhang 4 , Yonglong Shen 1 , Peng Zhang 1 , Suilin Liu 5 , Guosheng Shao 1 , Zhiqiang Yao 1
Affiliation
|
Monolayer MoTe2, with the narrowest direct bandgap of ≈1.1 eV among Mo‐ and W‐based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near‐infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer‐by‐layer growth of 2 in. wafer‐scale continuous monolayer 2H‐MoTe2 films on inert SiO2 dielectrics by molecular beam epitaxy is reported. A single‐step Mo‐flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H‐MoTe2 with 100% monolayer coverage is successfully grown on inert 2 in. SiO2/Si wafer, which exhibits highly uniform in‐plane structural continuity and excellent phonon‐limited carrier transport behavior. The dynamics‐controlled growth recipe is also extended to fabricate continuous monolayer 2H‐MoTe2 on atomic‐layer‐deposited Al2O3 dielectric. With the breakthrough in growth of wafer‐scale continuous 2H‐MoTe2 monolayers on device compatible dielectrics, batch fabrication of high‐mobility monolayer 2H‐MoTe2 field‐effect transistors and the three‐level integration of vertically stacked monolayer 2H‐MoTe2 transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H‐MoTe2 films on universal substrates and paves the way for the ultimate miniaturization of electronics.
中文翻译：
惰性非晶介电体上晶圆级连续半导体单层MoTe2的分子束外延可扩展生长
单层MoTe 2在基于Mo和W的过渡金属二卤化金属中最窄的直接带隙约为1.1 eV，作为在新型近红外电子学和光电子学中应用的有希望的候选者，已经引起了越来越多的关注。实现2D横向生长是在大范围内实现均匀厚度和属性控制的必要先决条件，尽管目前尚不成功。在这里，通过分子束外延在惰性SiO 2电介质上逐层生长2英寸晶圆级连续单层2H-MoTe 2薄膜的报道。开发了单步Mo-flux控制的成核和生长过程，以抑制岛的生长。原子平面2H‐MoTe 2具有100％单层覆盖率的膜可以在惰性2英寸SiO 2 / Si晶片上成功生长，该晶片具有高度均匀的面内结构连续性和出色的声子限制载流子传输性能。动力学控制的生长配方也得到扩展，可以在原子层沉积的Al 2 O 3电介质上制造连续的单层2H-MoTe 2。随着器件兼容电介质上晶圆级连续2H-MoTe 2单层的增长取得突破，高迁移率单层2H-MoTe 2场效应晶体管的批量制造以及垂直堆叠单层2H-MoTe 2的三级集成成功演示了用于3D电路的晶体管阵列。这项工作为在通用基板上单层2H-MoTe 2薄膜的可扩展合成提供了新颖的见解，并为电子产品的最终小型化铺平了道路。
更新日期：2019-06-14
中文翻译：
惰性非晶介电体上晶圆级连续半导体单层MoTe2的分子束外延可扩展生长
单层MoTe 2在基于Mo和W的过渡金属二卤化金属中最窄的直接带隙约为1.1 eV，作为在新型近红外电子学和光电子学中应用的有希望的候选者，已经引起了越来越多的关注。实现2D横向生长是在大范围内实现均匀厚度和属性控制的必要先决条件，尽管目前尚不成功。在这里，通过分子束外延在惰性SiO 2电介质上逐层生长2英寸晶圆级连续单层2H-MoTe 2薄膜的报道。开发了单步Mo-flux控制的成核和生长过程，以抑制岛的生长。原子平面2H‐MoTe 2具有100％单层覆盖率的膜可以在惰性2英寸SiO 2 / Si晶片上成功生长，该晶片具有高度均匀的面内结构连续性和出色的声子限制载流子传输性能。动力学控制的生长配方也得到扩展，可以在原子层沉积的Al 2 O 3电介质上制造连续的单层2H-MoTe 2。随着器件兼容电介质上晶圆级连续2H-MoTe 2单层的增长取得突破，高迁移率单层2H-MoTe 2场效应晶体管的批量制造以及垂直堆叠单层2H-MoTe 2的三级集成成功演示了用于3D电路的晶体管阵列。这项工作为在通用基板上单层2H-MoTe 2薄膜的可扩展合成提供了新颖的见解，并为电子产品的最终小型化铺平了道路。
京公网安备 11010802027423号