Tailoring the film morphology and interface band offset of caesium bismuth iodide-based Pb-free perovskite solar cells†,Journal of Materials Chemistry C

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Tailoring the film morphology and interface band offset of caesium bismuth iodide-based Pb-free perovskite solar cells†
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2019-06-06 00:00:00 , DOI: 10.1039/c9tc02181g
Dhruba B. Khadka _{1,

2,

3,

4,

5} , Yasuhiro Shirai _{2,

3,

4,

5} , Masatoshi Yanagida _{2,

3,

4,

5} , Kenjiro Miyano _{2,

3,

4,

5}

Affiliation

Bismuth-based halide perovskites (Bi-HaP) are low toxicity and air-stable materials with promising photo-absorber properties. In this study, we fabricated Bi-HaP (Cs₃Bi₂I₉ and CsBi₃I₁₀) films by a solution process followed by solvent annealing and investigated the crystal growth and optoelectronic properties of these materials. A compact and large grain morphology of the Bi-HaP films was realized by annealing under ambient solvent vapor conditions. Collective analysis of XRD patterns, and Raman spectra, absorption and PL spectra of the fabricated films corroborates that the Cs₃Bi₂I₉ film (E_g ∼ 2.08 eV) with a hexagonal crystal phase is more stable under annealing conditions in a wide temperature range and ambient solvent vapor annealing conditions as compared to the other CsBi₃I₁₀ thin film, having the narrower E_g ∼ 1.8 eV, of the Bi-HaP family. We have achieved the best power conversion efficiency as high as ∼1.26% with the open circuit voltage of 0.74 V for the device fabricated with Cs₃Bi₂I₉. The analysis of material properties and device characteristics indicates that morphology tailoring, surface chemistry control, and interface band offset engineering are important for the further improvement of Bi-HaP-based devices.

中文翻译：

量身定制基于碘化铯酸铋的无铅钙钛矿太阳能电池的薄膜形态和界面能带偏移†

铋基卤化物钙钛矿（Bi-HaP）是低毒且对空气稳定的材料，具有良好的光吸收性能。在这项研究中，我们通过固溶工艺，随后进行溶剂退火制备了Bi-HaP（Cs ₃ Bi ₂ I ₉和CsBi ₃ I ₁₀）薄膜，并研究了这些材料的晶体生长和光电性能。通过在环境溶剂蒸汽条件下进行退火，可以实现Bi-HaP膜的致密大晶粒形态。所制造薄膜的XRD图谱，拉曼光谱，吸收光谱和PL光谱的集体分析证实了Cs ₃ Bi ₂ I ₉薄膜（E _g相比于其它CSBI〜2.08 eV）的具有六方晶相是在宽温度范围和环境溶剂蒸气退火条件退火条件下更稳定的₃我₁₀薄膜，具有较窄ë_克〜1.8eV的，铋的-HaP家庭。对于由Cs ₃ Bi ₂ I ₉制成的器件，我们以0.74 V的开路电压实现了约1.26％的最佳功率转换效率。材料性能和器件特性的分析表明，形态修整，表面化学控制和界面带偏移工程对于基于Bi-HaP的器件的进一步改进很重要。

更新日期：2019-06-06

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