Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films,ACS Photonics

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Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films
ACS Photonics ( IF 6.5 ) Pub Date : 2019-06-03 00:00:00 , DOI: 10.1021/acsphotonics.9b00290
Nikolai Christian Passler ₁ , I. Razdolski ₁ , D. Scott Katzer ₂ , D. F. Storm ₂ , Joshua D. Caldwell _{2,

3} , Martin Wolf ₁ , Alexander Paarmann ₁

Affiliation

Immense optical field enhancement was predicted to occur for the Berreman mode in ultrathin films at frequencies in the vicinity of epsilon-near-zero (ENZ). Here, we report the first experimental proof of this prediction in the mid-infrared by probing the resonantly enhanced second harmonic generation (SHG) at the longitudinal optic phonon frequency from a deeply subwavelength-thin aluminum nitride (AlN) film. Employing a transfer matrix formalism, we show that the field enhancement is completely localized inside the AlN layer, revealing that the observed SHG signal of the Berreman mode is solely generated in the AlN film. Our results demonstrate that ENZ Berreman modes in intrinsically low-loss polar dielectric crystals constitute a promising platform for nonlinear nanophotonic applications.

中文翻译：

超薄极性晶体膜中的声子E-近零贝雷曼模式产生的第二次谐波产生

预计超薄膜中Berreman模式在epsilon近零（ENZ）附近的频率处会发生巨大的光场增强。在这里，我们通过探测来自深亚波长薄氮化铝（AlN）膜在纵向光子声子频率下共振增强的二次谐波产生（SHG），报告了中红外预测的第一实验证据。利用转移矩阵形式，我们表明场增强完全位于AlN层内部，这表明观察到的Berreman模式的SHG信号仅在AlN膜中产生。我们的结果表明，本征低损耗极性电介质晶体中的ENZ Berreman模构成了非线性纳米光子应用的有前途的平台。

更新日期：2019-06-03

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