N-rich carbon coated CoSnO3 derived from in situ construction of a Co–MOF with enhanced sodium storage performance,Journal of Materials Chemistry A

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N-rich carbon coated CoSnO3 derived from in situ construction of a Co–MOF with enhanced sodium storage performance
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2018-02-19 00:00:00 , DOI: 10.1039/c7ta10448k
Guoqiang Zou _{1,

2,

3,

4} , Hongshuai Hou _{1,

2,

3,

4} , Ganggang Zhao _{1,

2,

3,

4} , Peng Ge _{1,

2,

3,

4} , Dulin Yin _{5,

6,

7,

8} , Xiaobo Ji _{1,

2,

3,

4}

Affiliation

In this study, N-rich carbon coated interconnected CoSnO₃ nanoboxes (CoSnO₃–NCs) with controllable amounts of N-rich carbon ranging from 7.5% to 24.6% were firstly prepared by the carbonization of CoSnO₃–MOFs. Impressively, the preparation of CoSnO₃–MOFs has been realized for the first time by directly utilizing CoSnO₃ as the precursor under solvent-free conditions, bridging between the cobalt(II) ion in the skeleton of CoSnO₃ and the 2-methylimidazole. Interestingly, the growth of these CoSnO₃–MOFs can be manipulated by changing the amount of 2-methylimidazole used, resulting in a tunable N-rich carbon content. Furthermore, the electrochemical storage behavior of these materials for SIBs was initially explored. Compared with the pure CoSnO_3, the as-resulted CoSnO₃–NC materials showed largely enhanced sodium storage performance with a reversible capacity of 493.9 mA h g⁻¹ at a current density of 0.1 A g⁻¹ after 100 cycles. Moreover, the as-prepared materials showed an excellent high rate storage performance with a remarkable capacity of 273.8 mA h g⁻¹ at 1 A g⁻¹ after 1000 cycles. This work provides a new approach for constructing Co–MOFs as well as providing an efficient N-rich carbon-coating route, which may be expanded to other Co-based oxides and can greatly expand the development of new species of Co-based MOFs.

中文翻译：

富含碳的CoSnO ₃富碳涂层，是通过原位构建具有增强的钠储存性能的Co-MOF制成的

在这项研究中，首先通过CoSnO ₃ -MOF的碳化制备了可控量的N含量范围为7.5％至24.6％的N富碳互连CoSnO ₃ -NC纳米盒（CoSnO ₃ -NCs）。令人印象深刻的是，CoSnO ₃ -MOF的制备首次通过在无溶剂条件下直接利用CoSnO ₃作为前体，在CoSnO ₃骨架中的钴（II）离子和2-甲基咪唑之间架桥而实现。有趣的是，这些CoSnO ₃的增长–可以通过改变2-甲基咪唑的使用量来控制MOF，从而可调节的富N碳含量。此外，最初探索了这些材料对SIB的电化学存储行为。与纯CoSnO ₃相比，如此得到的CoSnO ₃ -NC材料在100次循环后在0.1 A g ^-1的电流密度下具有493.9 mA hg ^-1的可逆容量，大大提高了钠存储性能。此外，所制备的材料显示出优异的高倍率存储性能，在1 A g ^-1时具有273.8 mA hg ^-1的显着容量经过1000个周期。这项工作为构建Co-MOF提供了一种新方法，并提供了一种有效的富N碳涂覆途径，该途径可能会扩展到其他Co-基氧化物，并可以大大扩展Co-MOFs新物种的开发。

更新日期：2018-03-13

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