Single Electron Precision in the Measurement of Charge Distributions on Electrically Biased Graphene Nanotips Using Electron Holography,Nano Letters

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Single Electron Precision in the Measurement of Charge Distributions on Electrically Biased Graphene Nanotips Using Electron Holography
Nano Letters ( IF 9.6 ) Pub Date : 2019-05-22 00:00:00 , DOI: 10.1021/acs.nanolett.9b01487
Leonardo Vicarelli ₁ , Vadim Migunov _{2,

3} , Sairam K. Malladi ₁ , Henny W. Zandbergen ₁ , Rafal E. Dunin-Borkowski ₂

Affiliation

We use off-axis electron holography to measure the electrostatic charge density distributions on graphene-based nanogap devices that have thicknesses of between 1 and 10 monolayers and separations of between 8 and 58 nm with a precision of better than a single unit charge. Our experimental measurements, which are compared with finite element simulations, show that wider graphene tips, which have thicknesses of a single monolayer at their ends, exhibit charge accumulation along their edges. The results are relevant for both fundamental research on graphene electrostatics and applications of graphene nanogaps to single nucleotide detection in DNA sequencing, single molecule electronics, plasmonic antennae, and cold field emission sources.

中文翻译：

电子全息术在电偏置石墨烯纳米尖端上的电荷分布测量中的单电子精度

我们使用离轴电子全息术来测量基于石墨烯的纳米间隙器件上的静电荷密度分布，该器件的厚度在1到10个单层之间，间距在8到58 nm之间，其精度优于单个单位电荷。我们的实验测量结果与有限元模拟进行了比较，结果表明，较宽的石墨烯尖端在其端部具有单个单层的厚度，在其边缘显示出电荷积累。这些结果对于石墨烯静电学的基础研究以及石墨烯纳米间隙在DNA测序中的单核苷酸检测，单分子电子学，等离子天线和冷场发射源中的应用都具有重要意义。

更新日期：2019-05-22

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