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Stacking Fault-Induced Minimized Lattice Thermal Conductivity in the High-Performance GeTe-Based Thermoelectric Materials upon Bi2Te3 Alloying
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-05-15 00:00:00 , DOI: 10.1021/acsami.9b04984 Junqin Li 1 , Yucheng Xie 1 , Chunxiao Zhang 1 , Kuan Ma 1 , Fusheng Liu 1 , Weiqin Ao 1 , Yu Li 1 , Chaohua Zhang 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-05-15 00:00:00 , DOI: 10.1021/acsami.9b04984 Junqin Li 1 , Yucheng Xie 1 , Chunxiao Zhang 1 , Kuan Ma 1 , Fusheng Liu 1 , Weiqin Ao 1 , Yu Li 1 , Chaohua Zhang 1
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Materials with low lattice thermal conductivity (κlat) are crucial for the applications of thermal insulation and thermoelectric (TE) energy conversion. Stacking fault (SF)-induced phonon scattering within interfaces has been put forward theoretically by Klemens in 1950s. However, unlike other traditional defects such as point defects, grain boundaries, and dislocations, the role of SF for reducing κlat remains poorly understood and is yet to be revealed experimentally. The layered Bi2Te3 with a van der Waals gap shows different stacking structures than the nonlayered GeTe, which is used to introduce SFs into the GeTe-based alloys in this work. On the basis of the experimental and theoretical modeling results, this paper reveals the significant contribution of SF phonon scattering for minimizing the κlat. Besides the achieved extremely low κlat (∼0.39 W m–1 K–1 at 573 K), optimized carrier density and band convergence are also realized in the GeTe-based alloys upon Bi2Te3 alloying, leading to a significant high TE figure of merit ZT > 2 at 773 K and an averaged ZT > 1.4 within 300–773 K. This SF engineering strategy provides a different avenue to reduce the κlat for enhancing the performance of thermal insulation and TE materials.
中文翻译：
Bi 2 Te 3合金化在高性能基于GeTe的热电材料中堆叠引起故障的晶格导热系数最小
具有低晶格热导率（κlat）的材料对于绝热和热电（TE）能量转换的应用至关重要。Klemens在1950年代从理论上提出了堆叠缺陷（SF）引起的声子散射。然而，与其他传统的缺陷，如点缺陷，晶界和位错，SF的用于减少κ作用LAT仍然知之甚少和尚待实验揭示。层状Bi 2 Te 3Van der Waals间隙与非分层GeTe的堆叠结构不同，后者用于将SFs引入GeTe基合金中。在实验和理论模拟结果的基础上，揭示出SF声子散射的最小化的κ的显著贡献纬度。除了实现极低κ LAT（~0.39脉冲W M -1 ķ -1在573 K），优化的载流子密度和带收敛也实现了在碧基于的GeTe-合金2碲3合金化，从而导致高显著TE品质因数ZT > 2在773 K和平均ZT内300-773 K.这SF工程策略> 1.4提供了不同的途径，以减少κ LAT用于增强热绝缘和TE材料的性能。
更新日期：2019-05-15
中文翻译：
Bi 2 Te 3合金化在高性能基于GeTe的热电材料中堆叠引起故障的晶格导热系数最小
具有低晶格热导率（κlat）的材料对于绝热和热电（TE）能量转换的应用至关重要。Klemens在1950年代从理论上提出了堆叠缺陷（SF）引起的声子散射。然而，与其他传统的缺陷，如点缺陷，晶界和位错，SF的用于减少κ作用LAT仍然知之甚少和尚待实验揭示。层状Bi 2 Te 3Van der Waals间隙与非分层GeTe的堆叠结构不同，后者用于将SFs引入GeTe基合金中。在实验和理论模拟结果的基础上，揭示出SF声子散射的最小化的κ的显著贡献纬度。除了实现极低κ LAT（~0.39脉冲W M -1 ķ -1在573 K），优化的载流子密度和带收敛也实现了在碧基于的GeTe-合金2碲3合金化，从而导致高显著TE品质因数ZT > 2在773 K和平均ZT内300-773 K.这SF工程策略> 1.4提供了不同的途径，以减少κ LAT用于增强热绝缘和TE材料的性能。
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