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Electrochemically Assembled Cu2O Nanoparticles Using Crystallographically Anisotropic Functional Metal Ions and Highly Expeditious Resistive Switching via Nanoparticle Coarsening
ACS Nano ( IF 15.8 ) Pub Date : 2019-05-14 00:00:00 , DOI: 10.1021/acsnano.9b02108 Dong Su Kim 1 , Young Dae Yun 1 , Joo Sung Kim 1 , Young Been Kim 1 , Sung Hyeon Jung 1 , Nishad G. Deshpande 1 , Ho Seong Lee 2 , Hyung Koun Cho 1
ACS Nano ( IF 15.8 ) Pub Date : 2019-05-14 00:00:00 , DOI: 10.1021/acsnano.9b02108 Dong Su Kim 1 , Young Dae Yun 1 , Joo Sung Kim 1 , Young Been Kim 1 , Sung Hyeon Jung 1 , Nishad G. Deshpande 1 , Ho Seong Lee 2 , Hyung Koun Cho 1
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We have developed an artificially controllable strategy of an electrodeposition process adequate for resistive random-access memory (ReRAM) applications of binary Cu2O. Typically, the precise control of OH– ion concentration (the intermediate supplier of oxygen ions) at the electrode’s surface decides the overall reaction rate of the Cu2O. Here, the suggested Pb and Sb metal additives preferentially contribute to the consumption of OH– ions and the supply of OH– ions, respectively, during the Cu2O electrochemical reaction so that the final products are the (200) preferential quadrangular pyramids and the (111) preferential triangular pyramids. Interestingly, the coexistence of Sb/Pb precursors in the Cu electrolytes results in extraordinarily decreased reaction rate from the opposite action of OH– ion utilization as well as intense progressive growth behavior, and the resultant Cu2O films consist of crystallized small-size nanoparticles (NPs) in an amorphous-like matrix. In the case of ReRAM applications, while the polycrystalline film induces irregular device performance and the amorphous layer shows an easily irreparable electrical breakdown, our NP-assembled Cu2O films from Pb/Sb metal ions reveal the formation of a conduction bridge via phase change to a crystalline filament with no need for forming voltage and with superior electrical stability. It is attributed to the coalescence of crystal NPs into large grains during the set/reset cycle process for the heat dissipation of Joule heating. The Cu2O sample prepared with a 3 mM Sb + 3 mM Pb mixture solution exhibits forming-free ReRAM devices with high on/off resistance ratios of 1.2 × 104 and long-term electrical/thermal stability.
中文翻译：
电化学组装的Cu 2 O纳米粒子，利用晶体学各向异性的功能金属离子和通过纳米粒子粗化的快速电阻切换
我们开发了一种电沉积工艺的足够电阻式随机存取存储器（ReRAM中）的二进制的Cu应用人工可控策略2通常O.，OH的精确控制-在电极表面离子浓度（氧离子的中间供应商）决定Cu的总反应速率2 O.在此，建议的Pb和Sb的金属添加剂优选地有助于OH的消耗-离子和OH的供给-离子，分别在Cu中2进行电化学反应，使最终产物为（200）优先四角锥和（111）优先三角锥。有趣的是，锑/铅前体于Cu共存电解质导致非常从OH的相反作用降低反应速率-离子利用率，以及高强度渐进生长行为，并且将所得的Cu 2 ö膜由结晶化小尺寸的纳米颗粒的（NPs）在无定形的矩阵中。在ReRAM应用的情况下，虽然多晶膜会引起不规则的器件性能，而非晶层则表现出易于修复的电击穿，但我们由Pb / Sb金属离子组成的NP组装的Cu 2 O膜揭示了导电桥的形成通过相变形成结晶长丝，无需形成电压，并且具有出色的电稳定性。这归因于在焦耳加热的散热过程中，在凝固/复位循环过程中晶体NP聚结成大晶粒。用3 mM Sb + 3 mM Pb混合溶液制备的Cu 2 O样品显示出无成型的ReRAM器件，具有1.2×10 4的高导通/截止电阻比和长期的电/热稳定性。
更新日期：2019-05-14
中文翻译：
电化学组装的Cu 2 O纳米粒子，利用晶体学各向异性的功能金属离子和通过纳米粒子粗化的快速电阻切换
我们开发了一种电沉积工艺的足够电阻式随机存取存储器（ReRAM中）的二进制的Cu应用人工可控策略2通常O.，OH的精确控制-在电极表面离子浓度（氧离子的中间供应商）决定Cu的总反应速率2 O.在此，建议的Pb和Sb的金属添加剂优选地有助于OH的消耗-离子和OH的供给-离子，分别在Cu中2进行电化学反应，使最终产物为（200）优先四角锥和（111）优先三角锥。有趣的是，锑/铅前体于Cu共存电解质导致非常从OH的相反作用降低反应速率-离子利用率，以及高强度渐进生长行为，并且将所得的Cu 2 ö膜由结晶化小尺寸的纳米颗粒的（NPs）在无定形的矩阵中。在ReRAM应用的情况下，虽然多晶膜会引起不规则的器件性能，而非晶层则表现出易于修复的电击穿，但我们由Pb / Sb金属离子组成的NP组装的Cu 2 O膜揭示了导电桥的形成通过相变形成结晶长丝，无需形成电压，并且具有出色的电稳定性。这归因于在焦耳加热的散热过程中，在凝固/复位循环过程中晶体NP聚结成大晶粒。用3 mM Sb + 3 mM Pb混合溶液制备的Cu 2 O样品显示出无成型的ReRAM器件，具有1.2×10 4的高导通/截止电阻比和长期的电/热稳定性。
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