Low dark current, high-responsivity middle-wavelength infrared (IR) graphene photodetectors using photo-gating amplification of injected photo-carriers are demonstrated. A graphene/p-indium antimonide (InSb) heterojunction and graphene/insulator region were formed. The injected photo-carriers from InSb to graphene were amplified by photo-gating induced in the graphene/tetraethyl orthosilicate (TEOS) region, resulting in the high responsivity and low dark current performance. A responsivity of 14.9 A/W and an ON/OFF ratio of $2.66\times {10}^4$ were achieved. The photoresponse is shown to be determined by the cross-sectional area between the graphene and the TEOS-${\mathrm{SiO}}_2$, in which the injected photo-carriers into graphene were modulated and amplified by the photo-gating effect. Our results indicate that high-performance IR photodetectors based on the developed graphene photodetectors can be realized.

中文翻译：

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低暗电流和高响应度石墨烯中红外光电探测器，通过光门控放大注入的光载流子

演示了使用注入的载流子的光门控放大的低暗电流，高响应度的中波长红外（IR）石墨烯光电探测器。形成了石墨烯/对铟铟锡（InSb）异质结和石墨烯/绝缘体区域。通过在石墨烯/原硅酸四乙酯（TEOS）区域中诱导的光门控，放大了从InSb注入到石墨烯的光载流子，从而获得了高响应性和低暗电流性能。响应度为14.9 A / W，ON / OFF比为$2.66\times {10}^4$实现了。显示光响应由石墨烯和TEOS-之间的横截面积决定${\mathrm{二氧化硅}}_{\mathrm{2个}}$，其中通过光选通效应调制并放大了注入到石墨烯中的光载流子。我们的结果表明，可以实现基于已开发的石墨烯光电探测器的高性能IR光电探测器。