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Dual-Band, High-Performance Phototransistors from Hybrid Perovskite and Organic Crystal Array for Secure Communication Applications
ACS Nano ( IF 15.8 ) Pub Date : 2019-05-08 00:00:00 , DOI: 10.1021/acsnano.9b01734 Xiuzhen Xu 1 , Wei Deng 1 , Xiujuan Zhang 1 , Liming Huang 1 , Wei Wang 1 , Ruofei Jia 1 , Di Wu 2 , Xiaohong Zhang 1 , Jiansheng Jie 1 , Shuit-Tong Lee 1
ACS Nano ( IF 15.8 ) Pub Date : 2019-05-08 00:00:00 , DOI: 10.1021/acsnano.9b01734 Xiuzhen Xu 1 , Wei Deng 1 , Xiujuan Zhang 1 , Liming Huang 1 , Wei Wang 1 , Ruofei Jia 1 , Di Wu 2 , Xiaohong Zhang 1 , Jiansheng Jie 1 , Shuit-Tong Lee 1
Affiliation
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High-performance phototransistors made from organic semiconductor single crystals (OSSCs) have attracted much attention due to the high responsivity and solution-processing capability of OSSCs. However, OSSC-based phototransistors capable of dual-band spectral response remain a difficult challenge to achieve because organic semiconductors usually possess only narrow single-band absorption. Here, we report the fabrication of high-performance, dual-band phototransistors from a hybrid structure of a 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single-crystal array coated with CH3NH3PbI3 nanoparticles (NPs) synthesized by a simple, one-step solution method. In contrast to C8-BTBT and CH3NH3PbI3 NPs with respective absorption in the ultraviolet (UV) and visible (vis) region, their hybrid structure shows broad absorption covering the entire UV–vis range. The hybrid-based phototransistors exhibit an ultrahigh responsivity of >1.72 × 104 A/W in the 252–780 nm region, which represents the best performance for solution-processing, broadband photodetectors. Moreover, integrated phototransistor circuitries from the hybrid CH3NH3PbI3 NPs/C8-BTBT single-crystal array show applications for high-security communication.
中文翻译：
混合钙钛矿和有机晶体阵列的双波段高性能光电晶体管，用于安全通信应用
由有机半导体单晶（OSSC）制成的高性能光电晶体管因OSSC的高响应性和溶液处理能力而备受关注。然而，由于有机半导体通常仅具有窄的单频带吸收，因此能够实现双频带光谱响应的基于OSSC的光电晶体管仍然是一项艰巨的挑战。在这里，我们报告从2,7-二辛基[1]苯并噻吩并[3,2- b ] [1]苯并噻吩（C8-BTBT）单晶阵列的混合结构中制造高性能双波段光电晶体管用一种简单的一步法合成的CH 3 NH 3 PbI 3纳米颗粒（NPs）包覆。与C8-BTBT和CH 3 NH相反3 PbI 3 NP在紫外线（UV）和可见光（vis）区域具有各自的吸收，它们的杂化结构显示出覆盖整个UV-vis范围的广泛吸收。基于混合的光电晶体管在252-780 nm区域具有超高的响应度，> 1.72×10 4 A / W，这代表了解决方案处理宽带光电检测器的最佳性能。而且，来自混合的CH 3 NH 3 PbI 3 NP / C8-BTBT单晶阵列的集成光电晶体管电路显示出用于高安全性通信的应用。
更新日期：2019-05-08
中文翻译：
混合钙钛矿和有机晶体阵列的双波段高性能光电晶体管，用于安全通信应用
由有机半导体单晶（OSSC）制成的高性能光电晶体管因OSSC的高响应性和溶液处理能力而备受关注。然而，由于有机半导体通常仅具有窄的单频带吸收，因此能够实现双频带光谱响应的基于OSSC的光电晶体管仍然是一项艰巨的挑战。在这里，我们报告从2,7-二辛基[1]苯并噻吩并[3,2- b ] [1]苯并噻吩（C8-BTBT）单晶阵列的混合结构中制造高性能双波段光电晶体管用一种简单的一步法合成的CH 3 NH 3 PbI 3纳米颗粒（NPs）包覆。与C8-BTBT和CH 3 NH相反3 PbI 3 NP在紫外线（UV）和可见光（vis）区域具有各自的吸收，它们的杂化结构显示出覆盖整个UV-vis范围的广泛吸收。基于混合的光电晶体管在252-780 nm区域具有超高的响应度，> 1.72×10 4 A / W，这代表了解决方案处理宽带光电检测器的最佳性能。而且，来自混合的CH 3 NH 3 PbI 3 NP / C8-BTBT单晶阵列的集成光电晶体管电路显示出用于高安全性通信的应用。
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