自对准顶栅共面InGaZnO薄膜晶体管的横向载流子扩散和源极-漏极串联电阻的研究。,Scientific Reports

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自对准顶栅共面InGaZnO薄膜晶体管的横向载流子扩散和源极-漏极串联电阻的研究。
Scientific Reports ( IF 3.8 ) Pub Date : 2019-04-29 , DOI: 10.1038/s41598-019-43186-7
Sae-Young Hong ₁ , Hee-Joong Kim ₁ , Dae-Hwan Kim ₁ , Ha-Yun Jeong ₁ , Sang-Hun Song ₁ , In-Tak Cho ₂ , Jiyong Noh ₂ , Pil Sang Yun ₂ , Seok-Woo Lee ₂ , Kwon-Shik Park ₂ , SooYoung Yoon ₂ , In Byeong Kang ₂ , Hyuck-In Kwon ₁

Affiliation

我们研究了沿栅极的平衡载流子浓度（n0）的横向分布以及沟道长度（L）对顶栅自对准（TG-SA）共面结构中的源极-漏极串联电阻（Rext）的影响非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）。使用基于成对的栅极到源极电压（VGS）的传输线方法以及从具有不同Ls的TFT获得的温度相关的传输特性来提取n0在整个通道上的横向分布。随着距源/漏结附近的沟道边缘的距离增加，n0突然减小；但是，在通道中部附近区域观察到的n0梯度要小得多。通过将漏电流导通方法应用于具有各种Ls的TFT，研究了L对TG-SA共面a-IGZO TFT中的Rext的影响。明显观察到Rext的增加，尤其是在低VGSs下，随着L的增加而增加，这可能归因于较长沟道器件中载流子浓度的较大梯度，源极/漏极结附近的载流子扩散增强。由于横向载流子扩散和相对较高的Rext是基于TG-SA共面结构的氧化物TFT的关键问题，因此该工作的结果有望用于进一步改善TG-SA共面结构的电性能和均匀性结构氧化物TFT。明显观察到Rext的增加，尤其是在低VGSs下，随着L的增加而增加，这可能归因于较长沟道器件中载流子浓度的较大梯度，源极/漏极结附近的载流子扩散增强。由于横向载流子扩散和相对较高的Rext是基于TG-SA共面结构的氧化物TFT的关键问题，因此该工作的结果有望用于进一步改善TG-SA共面结构的电性能和均匀性结构氧化物TFT。明显观察到Rext的增加，尤其是在低VGS时，随着L的增加而增加，这可能归因于较长沟道器件中载流子浓度的较大梯度，源极/漏极结附近的载流子扩散增强。由于横向载流子扩散和相对较高的Rext是基于TG-SA共面结构的氧化物TFT的关键问题，因此该工作的结果有望用于进一步改善TG-SA共面结构的电性能和均匀性结构氧化物TFT。

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Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors.

We investigated the lateral distribution of the equilibrium carrier concentration (n0) along the channel and the effects of channel length (L) on the source-drain series resistance (Rext) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of n0 across the channel was extracted using the paired gate-to-source voltage (VGS)-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different Ls. n0 abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of n0 was observed in the region near the middle of the channel. The effect of L on the Rext in the TG-SA coplanar a-IGZO TFT was investigated by applying the drain current-conductance method to the TFTs with various Ls. The increase of Rext was clearly observed with an increase in L especially at low VGSs, which was possibly attributed to the enhanced carrier diffusion near the source/drain junctions due to the larger gradient of the carrier concentration in the longer channel devices. Because the lateral carrier diffusion and the relatively high Rext are the critical issues in the TG-SA coplanar structure-based oxide TFTs, the results in this work are expected to be useful in further improving the electrical performance and uniformity of the TG-SA coplanar structure oxide TFTs.

更新日期：2019-04-29

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