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Synthesizing a ν=2/3 fractional quantum Hall effect edge state from counter-propagating ν=1 and ν=1/3 states.
Nature Communications ( IF 14.7 ) Pub Date : 2019-04-23 , DOI: 10.1038/s41467-019-09920-5 Yonatan Cohen 1 , Yuval Ronen 1, 2 , Wenmin Yang 1 , Daniel Banitt 1 , Jinhong Park 1 , Moty Heiblum 1 , Alexander D Mirlin 3, 4 , Yuval Gefen 1 , Vladimir Umansky 1
Nature Communications ( IF 14.7 ) Pub Date : 2019-04-23 , DOI: 10.1038/s41467-019-09920-5 Yonatan Cohen 1 , Yuval Ronen 1, 2 , Wenmin Yang 1 , Daniel Banitt 1 , Jinhong Park 1 , Moty Heiblum 1 , Alexander D Mirlin 3, 4 , Yuval Gefen 1 , Vladimir Umansky 1
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Topological edge-reconstruction occurs in hole-conjugate states of the fractional quantum Hall effect. The frequently studied filling factor, ν = 2/3, was originally proposed to harbor two counter-propagating modes: a downstream v = 1 and an upstream v = 1/3. However, charge equilibration between these two modes always led to an observed downstream v = 2/3 charge mode accompanied by an upstream neutral mode. Here, we present an approach to synthetize a v = 2/3 edge mode from its basic counter-propagating charged constituents, allowing a controlled equilibration between the two counter-propagating charge modes. This platform is based on a carefully designed double-quantum-well, which hosts two populated electronic sub-bands (lower and upper), with corresponding filling factors, vl and vu. By separating the 2D plane to two gated intersecting halves, each with different fillings, counter-propagating chiral modes can be formed along the intersection line. Equilibration between these modes can be controlled with the top gates' voltage and the magnetic field.
中文翻译：
从反向传播的ν= 1和ν= 1/3状态合成ν= 2/3分数量子霍尔效应边缘状态。
拓扑边缘重建发生在分数量子霍尔效应的空穴共轭状态下。最初建议将经常研究的填充因子ν= 2/3包含两个反向传播模式：下游v = 1和上游v = 1/3。但是，这两种模式之间的电荷平衡始终会导致观察到的下游v = 2/3充电模式以及上游中性模式。在这里，我们提出了一种从其基本的反向传播带电成分合成av = 2/3边缘模式的方法，从而实现了两种反向传播的电荷模式之间的受控平衡。该平台基于精心设计的双量子阱，该阱包含两个填充的电子子带（下部和上部），并具有相应的填充因子vl和vu。通过将2D平面分成两个门控相交的两半，每个具有不同的填充物，可以沿相交线形成反向传播的手性模式。这些模式之间的平衡可以通过顶栅的电压和磁场来控制。
更新日期：2019-05-16
中文翻译：
从反向传播的ν= 1和ν= 1/3状态合成ν= 2/3分数量子霍尔效应边缘状态。
拓扑边缘重建发生在分数量子霍尔效应的空穴共轭状态下。最初建议将经常研究的填充因子ν= 2/3包含两个反向传播模式：下游v = 1和上游v = 1/3。但是，这两种模式之间的电荷平衡始终会导致观察到的下游v = 2/3充电模式以及上游中性模式。在这里，我们提出了一种从其基本的反向传播带电成分合成av = 2/3边缘模式的方法，从而实现了两种反向传播的电荷模式之间的受控平衡。该平台基于精心设计的双量子阱，该阱包含两个填充的电子子带（下部和上部），并具有相应的填充因子vl和vu。通过将2D平面分成两个门控相交的两半，每个具有不同的填充物，可以沿相交线形成反向传播的手性模式。这些模式之间的平衡可以通过顶栅的电压和磁场来控制。
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