HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at the critical thickness d_c, corresponding to the band inversion and topological phase transition. The motivation of this work was to study magnetotransport properties of HgTe QWs with thickness approaching d_c, and examine them as potential candidates for quantum Hall effect (QHE) resistance standards. We show that in the case of d > d_c (inverted QWs), the quantization is influenced by coexistence of topological helical edge states and QHE chiral states. However, at d ≈ d_c, where QW states exhibit a graphene-like band structure, an accurate Hall resistance quantization in low magnetic fields (B ≤ 1.4 T) and at relatively high temperatures (T ≥ 1.3 K) may be achieved. We observe wider and more robust quantized QHE plateaus for holes, which suggests—in accordance with the “charge reservoir” model—a pinning of the Fermi level in the valence band region. Our analysis exhibits advantages and drawbacks of HgTe QWs for quantum metrology applications, as compared to graphene and GaAs counterparts.

HgTe量子阱（QW）是二维半导体系统，其在临界厚度d _c处改变其特性，对应于能带反转和拓扑相变。这项工作的目的是研究厚度接近d _c的HgTe QW的磁输运性质，并将其作为量子霍尔效应（QHE）电阻标准的潜在候选物。我们表明，在d  >  d _c（反向QWs）的情况下，量化受到拓扑螺旋边缘状态和QHE手性状态的共存的影响。然而，在d  ≈  d _{C ^}，其中QW状态表现出石墨烯状的带结构，在低磁场的准确霍尔电阻量化（乙 ≤1.4 T），并在相对高的温度（Ť  ≥1.3 K）可以被实现。我们观察到了更宽，更鲁棒的量子化QHE平稳期，这表明，根据“电荷库”模型，费价能级固定在价带区域。与石墨烯和GaAs对应物相比，我们的分析显示了用于量子计量应用的HgTe QW的优缺点。