Inorganic and Layered Perovskites for Optoelectronic Devices.,Advanced Materials

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Inorganic and Layered Perovskites for Optoelectronic Devices.
Advanced Materials ( IF 27.4 ) Pub Date : 2019-04-23 , DOI: 10.1002/adma.201807095
Azhar Fakharuddin _{1,

2,

3} , Umair Shabbir _{4,

5} , Weiming Qiu _{1,

2} , Tahir Iqbal ₄ , Muhammad Sultan ₅ , Paul Heremans _{1,

2} , Lukas Schmidt-Mende ₃

Affiliation

Organic-inorganic halide perovskites are making breakthroughs in a range of optoelectronic devices. Reports of >23% certified power conversion efficiency in photovoltaic devices, external quantum efficiency >21% in light-emitting diodes (LEDs), continuous-wave lasing and ultralow lasing thresholds in optically pumped lasers, and detectivity in photodetectors on a par with commercial GaAs rivals are being witnessed, making them the fastest ever emerging material technology. Still, questions on their toxicity and long-term stability raise concerns toward their market entry. The intrinsic instability in these materials arises due to the organic cation, typically the volatile methylamine (MA), which contributes to hysteresis in the current-voltage characteristics and ion migration. Alternative inorganic substitutes to MA, such as cesium, and large organic cations that lead to a layered structure, enhance structural as well as device operational stability. These perovskites also provide a high exciton binding energy that is a prerequisite to enhance radiative emission yield in LEDs. The incorporation of inorganic and layered perovskites, in the form of polycrystalline films or as single-crystalline nanostructure morphologies, is now leading to the demonstration of stable devices with excellent performance parameters. Herein, key developments made in various optoelectronic devices using these perovskites are summarized and an outlook toward stable yet efficient devices is presented.

中文翻译：

用于光电器件的无机和层状钙钛矿。

有机-无机卤化物钙钛矿正在一系列光电器件中取得突破。报告显示，光伏器件的功率转换效率> 23％，发光二极管（LED）的外部量子效率> 21％，光泵浦激光器的连续波激光和超低激光阈值，以及光电探测器的检出率可与商业水平相提并论目睹了GaAs竞争对手，使其成为有史以来最快的新兴材料技术。尽管如此，有关其毒性和长期稳定性的问题仍引起人们对其进入市场的担忧。这些材料的固有不稳定性是由于有机阳离子（通常是挥发性甲胺（MA））引起的，该有机阳离子会导致电流-电压特性的滞后和离子迁移。MA的替代无机替代物，例如铯，以及导致分层结构的大型有机阳离子，可增强结构以及设备的操作稳定性。这些钙钛矿还提供了高激子结合能，这是提高LED辐射发射率的前提。无机和层状钙钛矿以多晶膜形式或单晶纳米结构形态的掺入，目前正在证明具有优异性能参数的稳定装置。在此，总结了使用这些钙钛矿的各种光电器件的关键发展，并提出了对稳定而有效的器件的展望。这些钙钛矿还提供了高激子结合能，这是提高LED辐射发射率的前提。无机和层状钙钛矿以多晶膜形式或单晶纳米结构形态的掺入，目前正在证明具有优异性能参数的稳定装置。在此，总结了使用这些钙钛矿的各种光电器件的关键发展，并提出了对稳定而有效的器件的展望。这些钙钛矿还提供了高激子结合能，这是提高LED辐射发射率的前提。无机和层状钙钛矿以多晶膜形式或单晶纳米结构形态的掺入，目前正在证明具有优异性能参数的稳定装置。在此，总结了使用这些钙钛矿的各种光电器件的关键发展，并提出了对稳定而有效的器件的展望。

更新日期：2019-11-20

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