An electronic synapse (e-synapse) based on memristive switching is a promising electronic element that emulates a biological synapse to realize neuromorphic computing. However, the complex resistive switching process it relies on hampers the reproducibility of its performance. Thus, achievement of a reproducible electronic synapse with a high rate of finished products has become a significant challenge in the development of an artificial intelligent circuit. Here, we demonstrate an ultrathin e-synapse having high yield (>95%), minimal performance variation, and extremely low power consumption based on an Al₂O₃/graphene quantum dots/Al₂O₃ sandwich structure that was fabricated using atomic layer deposition. The e-synapse showed both high device-to-device and cycle-to-cycle reproducibility with high stability, endurance, and switching uniformity, because the essential synaptic behaviors could be observed. This implementation of an e-synapse with an Al₂O₃/graphene quantum dots/Al₂O₃ structure should intensify motivation for engineering e-synapses for neuromorphic computing.

基于忆阻性开关的电子突触（e-synapse）是一种有前途的电子元件，可以模拟生物突触来实现神经形态计算。但是，它所依赖的复杂的电阻开关过程妨碍了其性能的可重复性。因此，实现具有高成品率的可再现的电子突触已经成为人工智能电路开发中的重大挑战。在这里，我们展示了一种基于Al ₂ O ₃ /石墨烯量子点/ Al ₂ O _3的高产量（> 95％），性能差异最小，功耗极低的超薄电子突触。使用原子层沉积制造的夹层结构。由于可以观察到基本的突触行为，因此电子突触显示出高的装置间和循环间的可重复性以及高的稳定性，持久性和切换均匀性。具有Al ₂ O ₃ /石墨烯量子点/ Al ₂ O ₃结构的电子突触的这种实现应加强为神经形态计算工程化电子突触的动力。