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Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio
Small ( IF 13.0 ) Pub Date : 2019-04-10 , DOI: 10.1002/smll.201900580 Zhengyuan Wu 1, 2 , Zhuoxun Jiang 1 , Pengyu Song 2 , Pengfei Tian 1 , Laigui Hu 1 , Ran Liu 1 , Zhilai Fang 1 , Junyong Kang 2 , Tong‐Yi Zhang 3
Small ( IF 13.0 ) Pub Date : 2019-04-10 , DOI: 10.1002/smll.201900580 Zhengyuan Wu 1, 2 , Zhuoxun Jiang 1 , Pengyu Song 2 , Pengfei Tian 1 , Laigui Hu 1 , Ran Liu 1 , Zhilai Fang 1 , Junyong Kang 2 , Tong‐Yi Zhang 3
Affiliation
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2D β‐Ga2O3 nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin quasi‐hexagonal β‐Ga2O3 nanosheets with nanowire seeds and proposes a hierarchy‐oriented growth mechanism. The hierarchy‐oriented growth is initiated by epitaxial growth of a single‐crystalline
β‐Ga2O3 nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi‐hexagonal (010) β‐Ga2O3 nanosheets. The undoped 2D (010) β‐Ga2O3 nanosheet field effect transistor has a field‐effect electron mobility of 38 cm2 V−1 s−1 and an on/off current ratio of 107 with an average subthreshold swing of 150 mV dec−1. The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.
中文翻译：
具有高场效应电子迁移率和开/关电流比的单晶（010）β-Ga2O3纳米片的纳米线播种生长
2D的β-Ga 2 ö 3纳米片，作为基本材料，具有在紫外线的透明电极，高温气体传感器，太阳能盲光电检测器，以及功率器件的下一代很大的潜力，而它们的合成和生长具有高结晶质量和良好尚未报道受控制的定向。本研究表明如何生长单晶超薄准六边形的β-Ga 2个ö 3纳米片与纳米线的种子和提出了一种面向层次生长机制。定向生长是由单晶的外延生长引发的 的β-Ga 2 ö 3上的GaN纳米晶体纳米线和随后准六边形的同质外延生长（010）的β-Ga 2 ö 3个纳米片。未掺杂的2D（010）的β-Ga 2 ö 3纳米片场效应晶体管具有38cm的场效应电子迁移率2 V -1小号-1和一个开/关的10电流比7具有150的平均亚阈值摆幅mV dec -1。从纳米线到纳米片的技术为纳米片的制备铺平了一条新途径，这对纳米材料合成和生长领域以及纳米电子学领域都产生了巨大影响。
更新日期：2019-04-10
中文翻译：
具有高场效应电子迁移率和开/关电流比的单晶（010）β-Ga2O3纳米片的纳米线播种生长
2D的β-Ga 2 ö 3纳米片，作为基本材料，具有在紫外线的透明电极，高温气体传感器，太阳能盲光电检测器，以及功率器件的下一代很大的潜力，而它们的合成和生长具有高结晶质量和良好尚未报道受控制的定向。本研究表明如何生长单晶超薄准六边形的β-Ga 2个ö 3纳米片与纳米线的种子和提出了一种面向层次生长机制。定向生长是由单晶的外延生长引发的 的β-Ga 2 ö 3上的GaN纳米晶体纳米线和随后准六边形的同质外延生长（010）的β-Ga 2 ö 3个纳米片。未掺杂的2D（010）的β-Ga 2 ö 3纳米片场效应晶体管具有38cm的场效应电子迁移率2 V -1小号-1和一个开/关的10电流比7具有150的平均亚阈值摆幅mV dec -1。从纳米线到纳米片的技术为纳米片的制备铺平了一条新途径，这对纳米材料合成和生长领域以及纳米电子学领域都产生了巨大影响。
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