Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures†,Journal of Materials Chemistry C

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Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures†
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2019-04-08 00:00:00 , DOI: 10.1039/c8tc05795h
Guanjie Li _{1,

2,

3,

4,

5} , Xiaomin Li _{1,

2,

3,

4,

5} , Junliang Zhao _{5,

6,

7} , Qiuxiang Zhu _{1,

2,

3,

4,

5} , Yongbo Chen _{1,

2,

3,

4,

5}

Affiliation

BaTiO₃ (BTO)/MgO/GaN and BTO/MgO/AlGaN/GaN ferroelectric–semiconductor heterostructures with ultrathin MgO buffer layers were constructed by pulsed laser deposition, and an interfacial coupling mechanism between the ferroelectric polarization of BTO and two-dimensional electron gas (2DEG) at the AlGaN/GaN interface was explored for enhancement-mode high electron mobility transistors (HEMTs). The upward ferroelectric self-polarization characteristic of BTO integrated on GaN and AlGaN/GaN was induced by the suspect space-charge region at the BTO/GaN interface, which was directly confirmed by piezoresponse force microscopy. Thus, the 2DEG density at the AlGaN/GaN interface was spontaneously reduced by the ferroelectric field effect of BTO with upward polarization, and the threshold voltage was prominently increased to −0.4 V. More significantly, interfacial coupling correlation between the ferroelectric polarization state and 2DEG was established. Via modulating the ferroelectric polarization state of BTO, continuous regulation of the threshold voltage from −0.4 V to +3.2 V and a large counter-clockwise memory window of 2.2 V were demonstrated. A BTO/MgO/AlGaN/GaN heterostructure could be a promising candidate for GaN-based enhancement-mode HEMTs and non-volatile memory devices.

中文翻译：

BaTiO ₃ / MgO / AlGaN / GaN / Si异质结构中铁电极化与二维电子气的强界面耦合效应†

钛酸钡₃（BTO）/ MgO / GaN和BTO / MgO / AlGaN / GaN具有超薄MgO缓冲层的铁电半导体异质结构是通过脉冲激光沉积构建的，并且BTO的铁电极化与二维电子气（2DEG）之间存在界面耦合机制）在AlGaN / GaN界面上探索了用于增强模式高电子迁移率晶体管（HEMT）的方法。集成在GaN和AlGaN / GaN上的BTO的向上铁电自极化特性是由BTO / GaN界面处的可疑空间电荷区引起的，这可通过压电响应力显微镜直接证实。因此，通过向上极化的BTO的铁电场效应，自发地降低了AlGaN / GaN界面处的2DEG密度，并且阈值电压显着增加至-0.4V。通过调制BTO的铁电极化状态，证明了阈值电压从-0.4 V到+3.2 V的连续调节以及逆时针的2.2 V大存储窗口。BTO / MgO / AlGaN / GaN异质结构可能是基于GaN的增强模式HEMT和非易失性存储器件的有前途的候选者。

更新日期：2019-04-08

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