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Observation of Interfacial Antiferromagnetic Coupling between Magnetic Topological Insulator and Antiferromagnetic Insulator
Nano Letters ( IF 9.6 ) Pub Date : 2019-04-03 00:00:00 , DOI: 10.1021/acs.nanolett.9b00027 Fei Wang 1, 2 , Di Xiao 1 , Wei Yuan 3, 4 , Jue Jiang 1 , Yi-Fan Zhao 1 , Ling Zhang 1 , Yunyan Yao 3 , Wei Liu 2 , Zhidong Zhang 2 , Chaoxing Liu 1 , Jing Shi 4 , Wei Han 3, 5 , Moses H. W. Chan 1 , Nitin Samarth 1 , Cui-Zu Chang 1
Nano Letters ( IF 9.6 ) Pub Date : 2019-04-03 00:00:00 , DOI: 10.1021/acs.nanolett.9b00027 Fei Wang 1, 2 , Di Xiao 1 , Wei Yuan 3, 4 , Jue Jiang 1 , Yi-Fan Zhao 1 , Ling Zhang 1 , Yunyan Yao 3 , Wei Liu 2 , Zhidong Zhang 2 , Chaoxing Liu 1 , Jing Shi 4 , Wei Han 3, 5 , Moses H. W. Chan 1 , Nitin Samarth 1 , Cui-Zu Chang 1
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Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in harnessing these quantum phenomena toward technological applications. Here we fabricated a thin magnetic TI film on an antiferromagnetic (AFM) insulator Cr2O3 layer and found that the magnetic moments of the magnetic TI layer and the surface spins of the Cr2O3 layers favor interfacial AFM coupling. Field cooling studies show a crossover from negative to positive exchange bias clarifying the competition between the interfacial AFM coupling energy and the Zeeman energy in the AFM insulator layer. The interfacial exchange coupling also enhances the Curie temperature of the magnetic TI layer. The unique interfacial AFM alignment in magnetic TI on AFM insulator heterostructures opens a new route toward manipulating the interplay between topological states and magnetic orders in spin-engineered heterostructures, facilitating the exploration of proof-of-concept TI-based spintronic and electronic devices with multifunctionality and low power consumption.
中文翻译：
磁性拓扑绝缘子与反铁磁绝缘子之间界面反铁磁耦合的观察
据预测，在拓扑绝缘体（TI）中诱导磁阶以打破其时间反转对称性会揭示许多奇特的拓扑量子现象。TI层中磁阶的操纵可在将这些量子现象用于技术应用中发挥关键作用。在这里，我们在反铁磁（AFM）绝缘体Cr 2 O 3层上制备了一层磁性TI薄膜，发现磁性TI层的磁矩和Cr 2 O 3的表面自旋层有利于界面原子力显微镜耦合。现场冷却研究表明，从负交换偏置到正交换偏置的交变澄清了AFM绝缘层中界面AFM耦合能与塞曼能之间的竞争。界面交换耦合也提高了磁性TI层的居里温度。在AFM绝缘体异质结构上的磁性TI中独特的界面AFM对准为操纵自旋工程异质结构中的拓扑状态和磁序之间的相互作用开辟了一条新途径，从而有助于探索基于概念验证的基于TI的自旋电子和多功能电子器件和低功耗。
更新日期：2019-04-03
中文翻译：
磁性拓扑绝缘子与反铁磁绝缘子之间界面反铁磁耦合的观察
据预测，在拓扑绝缘体（TI）中诱导磁阶以打破其时间反转对称性会揭示许多奇特的拓扑量子现象。TI层中磁阶的操纵可在将这些量子现象用于技术应用中发挥关键作用。在这里，我们在反铁磁（AFM）绝缘体Cr 2 O 3层上制备了一层磁性TI薄膜，发现磁性TI层的磁矩和Cr 2 O 3的表面自旋层有利于界面原子力显微镜耦合。现场冷却研究表明，从负交换偏置到正交换偏置的交变澄清了AFM绝缘层中界面AFM耦合能与塞曼能之间的竞争。界面交换耦合也提高了磁性TI层的居里温度。在AFM绝缘体异质结构上的磁性TI中独特的界面AFM对准为操纵自旋工程异质结构中的拓扑状态和磁序之间的相互作用开辟了一条新途径，从而有助于探索基于概念验证的基于TI的自旋电子和多功能电子器件和低功耗。
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