当前位置：
X-MOL 学术
›
Adv. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-04-02 , DOI: 10.1002/aelm.201800938 Jiyeon Ma 1 , Hyung Jun Cho 1 , Junseok Heo 2 , Sunkook Kim 3 , Geonwook Yoo 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-04-02 , DOI: 10.1002/aelm.201800938 Jiyeon Ma 1 , Hyung Jun Cho 1 , Junseok Heo 2 , Sunkook Kim 3 , Geonwook Yoo 1
Affiliation
|
The ultra‐wide bandgap and cost‐effective melt‐growth of β‐Ga2O3 ensure its advantages over other wide bandgap materials, and competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double‐gate (ADG) β‐Ga2O3 nanomembrane field‐effect transistor (FET) comprised of a bottom‐gate (BG) metal‐oxide field‐effect transistor and a top‐gate (TG) metal‐semiconductor field‐effect transistor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral Schottky barrier diode (SBD), which exhibits high rectification ratio and low ideality factor. The top‐gate β‐Ga2O3 MESFET shows reasonable electrical performance with a high breakdown voltage, as anticipated by three terminal off‐state breakdown measurement. These properties are further enhanced by double‐gate operation, and superior device performance is demonstrated; positive‐shifted threshold voltage and reduced subthreshold slope enable the asymmetric double‐gate β‐Ga2O3 FET to operate at low power, and almost twice as much transconductance is demonstrated for high‐frequency operation. These results show the great potential of asymmetric double‐gate β‐Ga2O3 FETs for energy‐efficient high‐voltage and ‐frequency devices with optimal material and structure co‐designs.
中文翻译：
节能型功率器件的不对称双栅极β-Ga2O3纳米膜场效应晶体管
的超宽带隙和成本效益的熔融生长的β-Ga 2 ö 3确保其优于其他宽带隙材料，和有竞争力的电性能在各种器件结构被证明。在本文中，非对称双栅极（ADG）的β-Ga 2 ö 3纳米膜的场效应晶体管（FET）包括一底栅（BG）金属氧化物场效应晶体管和顶部栅极（TG）的演示了金属半导体场效应晶体管（MESFET）。肖特基接触特性通过表征横向肖特基势垒二极管（SBD）来验证，该二极管表现出高整流比和低理想因子。顶栅的β-Ga 2 ö 3MESFET具有高击穿电压，显示出合理的电气性能，这是三端断开状态击穿测量所预期的。通过双栅极操作进一步增强了这些特性，并展示了卓越的器件性能；正移的阈值电压和降低的亚阈值斜率使非对称双栅极的β-Ga 2 ö 3 FET在低功率下操作，和几乎两倍的跨导证明用于高频操作。这些结果表明非对称双栅极的β-Ga的巨大潜力2级ö 3的FET用于高能效高电压和-频率设备具有最佳的材料和结构共设计。
更新日期：2019-04-02
中文翻译：
节能型功率器件的不对称双栅极β-Ga2O3纳米膜场效应晶体管
的超宽带隙和成本效益的熔融生长的β-Ga 2 ö 3确保其优于其他宽带隙材料，和有竞争力的电性能在各种器件结构被证明。在本文中，非对称双栅极（ADG）的β-Ga 2 ö 3纳米膜的场效应晶体管（FET）包括一底栅（BG）金属氧化物场效应晶体管和顶部栅极（TG）的演示了金属半导体场效应晶体管（MESFET）。肖特基接触特性通过表征横向肖特基势垒二极管（SBD）来验证，该二极管表现出高整流比和低理想因子。顶栅的β-Ga 2 ö 3MESFET具有高击穿电压，显示出合理的电气性能，这是三端断开状态击穿测量所预期的。通过双栅极操作进一步增强了这些特性，并展示了卓越的器件性能；正移的阈值电压和降低的亚阈值斜率使非对称双栅极的β-Ga 2 ö 3 FET在低功率下操作，和几乎两倍的跨导证明用于高频操作。这些结果表明非对称双栅极的β-Ga的巨大潜力2级ö 3的FET用于高能效高电压和-频率设备具有最佳的材料和结构共设计。
京公网安备 11010802027423号