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Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2019-03-29 , DOI: 10.1002/adom.201900020 Rui Cao 1, 2 , Hui‐De Wang 1, 3 , Zhi‐Nan Guo 1 , David K. Sang 1 , Li‐Yuan Zhang 3 , Quan‐Lan Xiao 1 , Yu‐Peng Zhang 1 , Dian‐Yuan Fan 1 , Jian‐Qing Li 2 , Han Zhang 1
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2019-03-29 , DOI: 10.1002/adom.201900020 Rui Cao 1, 2 , Hui‐De Wang 1, 3 , Zhi‐Nan Guo 1 , David K. Sang 1 , Li‐Yuan Zhang 3 , Quan‐Lan Xiao 1 , Yu‐Peng Zhang 1 , Dian‐Yuan Fan 1 , Jian‐Qing Li 2 , Han Zhang 1
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2D materials offer tremendous opportunities for designing and investigating multifunctional high‐performance electronic and optoelectronic devices. In this contribution, a photogate vertical structure is devised by vertically stacking layered indium selenide (InSe) on top of layered black phosphorous (BP). The photodetector built with the vertical structure possesses a wide response range from 405 to 1550 nm, and the photodetector exhibits a relatively fast (≈22 ms) response and high responsivity of ≈53.80 A W−1 at λ = 655 nm and 43.11 A W−1 at λ = 1550 nm, respectively. Under visible‐light illumination (λ = 655 nm), the external quantum efficiency of the device can reach 1020%. By taking advantage of gate‐tunable modulation, the forward‐to‐reverse bias current ratio is as high as 103. In addition, the environmental degradation of BP could be effectively suppressed by InSe capping. The high sensitivity, broad spectral response, and enhanced stability of the photodetector show that the photogate structure provides a new opportunity for broad spectral detection or imaging at room temperature by using 2D materials with a vertical structure.
中文翻译：
黑色磷/硒化铟光电导检测器，用于可见光和近红外光，灵敏度高
2D材料为设计和研究多功能高性能电子和光电设备提供了巨大的机会。在此贡献中，通过将层状硒化铟（InSe）垂直堆叠在层状黑磷（BP）之上，设计出了光敏栅垂直结构。与垂直结构内置光电检测器具有一个宽响应范围从405到1550纳米，和光电检测器表现出相对快（≈22毫秒）≈53.80AW的响应和高响应-1在λ= 655 nm和43.11 AW -1分别在λ= 1550 nm处。在可见光照明（λ= 655 nm）下，设备的外部量子效率可以达到1020％。利用门极可调调制，正向和反向偏置电流比高达103。另外，通过InSe封端可以有效地抑制BP的环境降解。光电探测器的高灵敏度，宽光谱响应和增强的稳定性表明，通过使用具有垂直结构的2D材料，光电门结构为室温下的宽光谱检测或成像提供了新的机会。
更新日期：2019-03-29
中文翻译：
黑色磷/硒化铟光电导检测器，用于可见光和近红外光，灵敏度高
2D材料为设计和研究多功能高性能电子和光电设备提供了巨大的机会。在此贡献中，通过将层状硒化铟（InSe）垂直堆叠在层状黑磷（BP）之上，设计出了光敏栅垂直结构。与垂直结构内置光电检测器具有一个宽响应范围从405到1550纳米，和光电检测器表现出相对快（≈22毫秒）≈53.80AW的响应和高响应-1在λ= 655 nm和43.11 AW -1分别在λ= 1550 nm处。在可见光照明（λ= 655 nm）下，设备的外部量子效率可以达到1020％。利用门极可调调制，正向和反向偏置电流比高达103。另外，通过InSe封端可以有效地抑制BP的环境降解。光电探测器的高灵敏度，宽光谱响应和增强的稳定性表明，通过使用具有垂直结构的2D材料，光电门结构为室温下的宽光谱检测或成像提供了新的机会。
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