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Resolving the detrimental interface in co-evaporated MAPbI3 perovskite solar cells by hybrid growth method
Organic Electronics ( IF 2.7 ) Pub Date : 2019-03-28 , DOI: 10.1016/j.orgel.2019.03.047
Haitao Xu , Fuzong Xu , Wenzhen Wang , Yanyan Zhu , Zebo Fang , Bo Yao , Feng Hong , Jian Cui , Fei Xu , Run Xu , Chun-Chao Chen , Linjun Wang

Among various processing methods for growing perovskite thin layers, dual-source vacuum deposition was once regarded as the most economical and high throughput method. However, co-evaporation of MAI and PbI2 often leads to an inevitable PbI2 interfacial layer formed by the initial growth of evaporation resulting in a compromised efficiency of vacuum deposited MAPbI3 solar cell. Here, two modified growth methods based on vacuum co-evaporation, namely solution-vacuum hybrid method (SVHM) and soaking-assistant fully-vacuum method (SAFVM), are developed to grow a completely converted MAPbI3 perovskite layer at the interface prior to the co-evaporation of MAPbI3 perovskite layer. Upon these two methods, the unwanted PbI2 layer can be removed from the interface resulting in much improved power conversion efficiency up to 14.35%. Our result shows that, while unwanted interfacial PbI2 layer is the main cause of low performing co-evaporated perovskite solar cell devices, by removing the PbI2 interfacial layer we can unlock the full potential of vacuum-based perovskite solar cells to industrial mass production.



中文翻译:

通过混合生长法解决共蒸发的MAPbI 3钙钛矿太阳能电池中的有害界面

在用于生长钙钛矿薄层的各种处理方法中,双源真空沉积曾经被认为是最经济,生产量最高的方法。然而,MAI和PbI 2的共同蒸发通常导致由蒸发的初始生长形成的不可避免的PbI 2界面层,从而导致真空沉积的MAPbI 3太阳能电池的效率受损。在此,开发了两种基于真空共蒸发的改良生长方法,即溶液-真空混合法(SVHM)和均浸辅助全真空法(SAFVM),以在界面之前生长完全转化的MAPbI 3钙钛矿层。 MAPbI 3的共蒸发钙钛矿层。通过这两种方法,可以从界面上去除不需要的PbI 2层,从而使功率转换效率大大提高,最高可达14.35%。我们的结果表明,尽管有害的界面PbI 2层是低性能共蒸发钙钛矿太阳能电池器件的主要原因,但通过去除PbI 2界面层,我们可以释放真空基钙钛矿太阳能电池在工业批量生产中的全部潜力。 。

更新日期:2019-03-28
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