Synthesis of Bi2Te3 Single Crystals with Lateral Size up to Tens of Micrometers by Vapor Transport and Its Potential for Thermoelectric Applications,Crystal Growth & Design

当前位置： X-MOL 学术 › Cryst. Growth Des. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Synthesis of Bi2Te3 Single Crystals with Lateral Size up to Tens of Micrometers by Vapor Transport and Its Potential for Thermoelectric Applications
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2019-03-22 00:00:00 , DOI: 10.1021/acs.cgd.8b01931
Cheol-Min Hyun ₁ , Jeong-Hun Choi ₁ , Seung Won Lee ₁ , Seung-Young Seo ₂ , Myoung-Jae Lee ₃ , Se-Hun Kwon ₄ , Ji-Hoon Ahn ₁

Affiliation

Bismuth telluride (Bi₂Te₃) has recently attracted significant attention owing to its unique physical properties as a three-dimensional topological insulator and excellent properties as a thermoelectric material. Meanwhile, it is important to develop a synthesis process yielding high-quality single crystals over a large area to study the inherent physical properties and device applications of two-dimensional materials. However, the maturity of Bi₂Te₃ vapor-phase synthesis is not good, compared to those of other semiconductor two-dimensional crystals. In this study, therefore, we report the synthesis of relatively large-area Bi₂Te₃ crystals by vapor transport method, and we investigated the key process parameters for a synthesis of relatively thin and large-area Bi₂Te₃ crystals. The most important factor determining the crystal synthesis was the temperature of the substrate. A Bi₂Te₃ device exhibited a considerable photocurrent when the laser was irradiated inside the electrode area. This indicated that the photo-thermoelectric effect was the main mechanism of generation of photocurrent. The estimated Seebeck coefficient of the device was ∼196 μV/K, which is comparable to the previously reported high Seebeck coefficient of Bi₂Te₃. This synthesis method can guide the development and applications of various types of layered crystals with the space group of R3̅m.

中文翻译：

蒸汽传输横向尺寸高达数十微米的Bi ₂ Te ₃单晶的合成及其在热电应用中的潜力

碲化铋（Bi ₂ Te ₃）由于其作为三维拓扑绝缘体的独特物理性能以及作为热电材料的优异性能，最近引起了广泛的关注。同时，重要的是开发一种在大面积上产生高质量单晶的合成方法，以研究二维材料的固有物理性质和器件应用。然而，与其他半导体二维晶体相比，Bi ₂ Te ₃气相合成的成熟度不好。因此，在这项研究中，我们报告了较大面积的Bi ₂ Te ₃的合成通过气相传输法制备晶体，我们研究了合成相对薄而大面积的Bi ₂ Te ₃晶体的关键工艺参数。决定晶体合成的最重要因素是基板的温度。当在电极区域内照射激光时，Bi ₂ Te ₃装置显示出相当大的光电流。这表明光热电效应是产生光电流的主要机理。器件的塞贝克系数估计值为196μV/ K，与先前报道的Bi ₂ Te ₃高塞贝克系数相当。该合成方法可指导开发和各种类型的与空间群的层状晶体中的应用- [R 3米。

更新日期：2019-03-22

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南