GaN / AlN梯度界面的热阻,Physical Review Applied

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GaN / AlN梯度界面的热阻
Physical Review Applied ( IF 3.8 ) Pub Date : 2019-03-14 , DOI: 10.1103/physrevapplied.11.034036
Ambroise van Roekeghem , Bjorn Vermeersch , Jesús Carrete , Natalio Mingo

功率电子设备中按成分分级的界面可以消除位错，但它们也可以减少热传导，从而导致过热。我们量化了

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使用从头开始的格林函数对厚度变化的渐变界面进行分级，并将其与突变界面情况进行比较。合金与失配散射机制之间的相互作用产生了热阻与界面厚度的非平凡的功率相关性。我们显示，在与真实界面相关的长度尺度上，这种渐变界面的总体行为与有效合金薄膜的行为非常相似。

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Thermal Resistance ofGaN/AlNGraded Interfaces

Compositionally graded interfaces in power electronic devices eliminate dislocations but they can also decrease thermal conduction, leading to overheating. We quantify the thermal resistances of

Ga N

Al N

graded interfaces of varying thickness using ab initio Green’s functions and compare them with the abrupt interface case. A non-trivial power dependence of the thermal resistance versus the interface thickness emerges from the interplay of alloy and mismatch scattering mechanisms. We show that the overall behavior of such graded interfaces is very similar to that of a thin film of an effective alloy on the length scales relevant to real interfaces.

更新日期：2019-03-15

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