Abstract Ytterbium silicide nanoobjects were synthetized using pulsed laser ablation in an oven at temperatures of 800 and 1000 °C. Ablation of divided target Si/Yb in a flow of Ar resulted in deposits which contained mostly ytterbium silicide nanowires, nanorods and nanoparticles. Single nanoparticles (800 °C) are identical with Yb3Si5 alloy; nanorods possess both a monoclinic phase not corresponding to any known structure in the phase diagram Yb-Si and a face-centered cubic structure close to the pure Yb but with a high Si content. At the temperature of 1000 °C, the studied nanorods and nanowires decorated by nanocrystals are practically amorphous, whereas the structure of those nanocrystals is close to that of the nanorods with the face-centered cubic structure prepared at 800 °C. Nanowire (1000 °C) is a semiconductor with ρ = 132.9 Ω.cm at room temperature, which is comparable to a heavily doped silicon.

中文翻译：

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在烤箱中通过脉冲激光烧蚀制备的硅化镱纳米结构：结构和电学表征

摘要 在 800 和 1000 °C 的烘箱中使用脉冲激光烧蚀合成了硅化镱纳米物体。在 Ar 流中烧蚀分离的目标 Si/Yb 导致沉积物，其中主要包含硅化镱纳米线、纳米棒和纳米颗粒。单个纳米粒子（800°C）与 Yb3Si5 合金相同；纳米棒具有与 Yb-Si 相图中任何已知结构不对应的单斜相和接近纯 Yb 但具有高 Si 含量的面心立方结构。在 1000 °C 的温度下，所研究的纳米棒和由纳米晶体装饰的纳米线实际上是无定形的，而这些纳米晶体的结构与在 800 °C 下制备的面心立方结构的纳米棒的结构接近。纳米线 (1000 °C) 是一种 ρ = 132.9 Ω 的半导体。