Recent developments of piezotronic devices start to focus on the quantum behaviors of the nanostructured system going beyond the conventional device applications. Piezotronic devices utilize piezoelectric field to control the charge carrier behaviors at the junction, contact or interface of piezoelectric semiconductor, such as ZnO, GaN, and two-dimensional materials. In this study, we theoretically investigate the piezoelectric field effect on two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure by employing an approximate triangular potential model. Basic electronic properties such as wave function, electronic energy, electronic density distribution and the width of potential well are explored under the influence of the externally applied strain. From the electronic density, bound state can be eliminated or created by properly changing the external strain, meaning the effective modulation of piezotronic effect on quantum states. The piezoelectric field in 2DEG system is perpendicular to the electronic transport, which has remarkable advantage over the parallel case in switching devices. Furthermore, piezoelectric modulation of intrasubband transition enriches the fundamental theory of piezo-photonics and provides guidance for designing strain-gated infrared devices.

压电器件的最新发展开始集中于超越常规器件应用的纳米结构系统的量子行为。压电器件利用压电场来控制压电半导体（例如ZnO，GaN和二维材料）的结，接触或界面处的载流子行为。在这项研究中，我们通过近似的三角势模型从理论上研究了压电场效应对AlGaN / GaN异质结构中的二维电子气（2DEG）的影响。在外加应变的影响下，探索了诸如波函数，电子能量，电子密度分布和势阱宽度之类的基本电子性质。从电子密度来看 可以通过适当改变外部应变来消除或创建束缚态，这意味着可以有效地调制压电效应对量子态的作用。2DEG系统中的压电场垂直于电子传输，相对于并联设备中的并联设备，它具有显着的优势。此外，子带内跃迁的压电调制丰富了压电光子学的基础理论，并为设计应变门控红外设备提供了指导。