Due to remarkable electronic property, optical transparency, and mechanical flexibility, monolayer molybdenum disulfide (MoS2) has been demonstrated to be promising for electronic and optoelectronic devices. To date, the growth of high-quality and large-scale monolayer MoS2 has been one of the main challenges for practical applications. Here we present a MoS2-OH bilayer-mediated method that can fabricate inch-sized monolayer MoS2 on arbitrary substrates. This approach relies on a layer of hydroxide groups (-OH) that are preferentially attached to the (001) surface of MoS2 to form a MoS2-OH bilayer structure for growth of large-area monolayer MoS2 during the growth process. Specifically, the hydroxide layer impedes vertical growth of MoS2 layers along the [001] zone axis, promoting the monolayer growth of MoS2, constrains growth of the MoS2 monolayer only in the lateral direction into larger area, and effectively reduces sulfur vacancies and defects according to density functional theory calculations. Finally, the hydroxide groups advantageously prevent the MoS2 from interface oxidation in air, rendering high-quality MoS2 monolayers with carrier mobility up to ∼30 cm2 V-1 s-1. Using this approach, inch-sized uniform monolayer MoS2 has been fabricated on the sapphire and mica and high-quality monolayer MoS2 of single-crystalline domains exceeding 200 μm has been grown on various substrates including amorphous SiO2 and quartz and crystalline Si, SiC, Si3N4, and graphene This method provides a new opportunity for the monolayer growth of other two-dimensional transition metal dichalcogenides such as WS2 and MoSe2.

中文翻译：

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MoS2-OH 双层介导的任意衬底上英寸大小的单层 MoS2 的生长

由于卓越的电子性能、光学透明度和机械柔韧性，单层二硫化钼 (MoS2) 已被证明在电子和光电器件中具有广阔的应用前景。迄今为止，高质量和大规模单层二硫化钼的生长一直是实际应用的主要挑战之一。在这里，我们提出了一种 MoS2-OH 双层介导的方法，可以在任意基板上制造英寸大小的单层 MoS2。这种方法依赖于一层优先连接到 MoS2 的 (001) 表面的羟基 (-OH)，以形成 MoS2-OH 双层结构，用于在生长过程中生长大面积单层 MoS2。具体而言，氢氧化物层阻碍了 MoS2 层沿 [001] 区轴的垂直生长，促进了 MoS2 的单层生长，根据密度泛函理论计算，仅在横向上将 MoS2 单层的生长限制在更大的区域，并有效地减少硫空位和缺陷。最后，羟基有利地防止 MoS2 在空气中界面氧化，从而提供载流子迁移率高达 ~30 cm2 V-1 s-1 的高质量 MoS2 单层。使用这种方法，在蓝宝石和云母上制造了英寸大小的均匀单层 MoS2，并且在各种衬底上生长了超过 200 μm 的单晶域的高质量单层 MoS2，包括非晶 SiO2 和石英以及结晶 Si、SiC、Si3N4和石墨烯这种方法为其他二维过渡金属二硫属化物如 WS2 和 MoSe2 的单层生长提供了新的机会。