Abstract

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.

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中文翻译：

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无金属化学气相沉积法在硅上直接生长石墨烯

摘要

对单晶硅衬底（最常见的商用半导体）的无金属合成石墨烯对于许多技术应用而言至关重要。在这项工作中，我们报告了石墨烯在无金属，常压化学气相沉积的情况下直接在上下颠倒放置的单晶硅衬底上的生长。通过控制生长温度，面内传播，边缘传播和核心传播，可以确定石墨烯在硅上的生长过程。该过程产生原子上平坦的单层或双层石墨烯结构域，凹面双层石墨烯结构域和凸出的几层石墨烯结构域。这项工作将是朝着在单晶硅基板上合成大面积且层受控的高质量石墨烯迈出的重要一步。

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