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Phase Identification and Strong Second Harmonic Generation in Pure ε-InSe and Its Alloys
Nano Letters ( IF 9.6 ) Pub Date : 2019-03-06 00:00:00 , DOI: 10.1021/acs.nanolett.9b00487 Qiaoyan Hao 1 , Huan Yi 1 , Huimin Su 2 , Bin Wei 3 , Zhuo Wang 1 , Zhezhu Lao 4 , Yang Chai 5 , Zhongchang Wang 3 , Chuanhong Jin 4 , Junfeng Dai 2 , Wenjing Zhang 1
Nano Letters ( IF 9.6 ) Pub Date : 2019-03-06 00:00:00 , DOI: 10.1021/acs.nanolett.9b00487 Qiaoyan Hao 1 , Huan Yi 1 , Huimin Su 2 , Bin Wei 3 , Zhuo Wang 1 , Zhezhu Lao 4 , Yang Chai 5 , Zhongchang Wang 3 , Chuanhong Jin 4 , Junfeng Dai 2 , Wenjing Zhang 1
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Two-dimensional material indium selenide (InSe) has offered a new platform for fundamental research in virtue of its emerging fascinating properties. Unlike 2H-phase transition-metal dichalcogenides (TMDs), ε phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers, and predicted to have a strong second harmonic generation (SHG) effect. In this work, we find that the as-prepared pure InSe, alloyed InSe1–xTex and InSe1–xSx (x = 0.1 and 0.2) are ε phase structures and exhibit excellent SHG performance from few-layer to bulk-like dimension. This high SHG efficiency is attributed to the noncentrosymmetric crystal structure of the ε-InSe system, which has been clearly verified by aberration-corrected scanning transmission electron microscopy (STEM) images. The experimental results show that the SHG intensities from multilayer pure ε-InSe and alloyed InSe0.9Te0.1 and InSe1–xSx (x = 0.1 and 0.2) are around 1–2 orders of magnitude higher than that of the monolayer TMD systems and even superior to that of GaSe with the same thickness. The estimated nonlinear susceptibility χ(2) of ε-InSe is larger than that of ε-GaSe and monolayer TMDs. Our study provides first-hand information about the phase identification of ε-InSe and indicates an excellent candidate for nonlinear optical (NLO) applications as well as the possibility of engineering SHG response by alloying.
中文翻译：
纯ε-InSe及其合金的相识别和强二次谐波生成
二维材料硒化铟（InSe）凭借其令人着迷的迷人特性为基础研究提供了新的平台。与2H相过渡金属二卤化金属（TMD）不同，具有六边形晶胞的ε相InSe在所有层数上均具有破碎的反转对称性，并预计具有很强的二次谐波生成（SHG）效应。在这项工作中，我们发现所制备的纯InSe，合金化的InSe 1– x Te x和InSe 1– x S x（x= 0.1和0.2）是ε相结构，并且从几层到大块状尺寸都显示出出色的SHG性能。如此高的SHG效率归因于ε-InSe系统的非中心对称晶体结构，该结构已通过像差校正扫描透射电子显微镜（STEM）图像进行了清晰验证。实验结果表明，多层纯ε-InSe和合金化InSe 0.9 Te 0.1和InSe 1- x S x（x = 0.1和0.2）的SHG强度比单层TMD系统高约1-2个数量级。甚至优于相同厚度的GaSe。估计的非线性磁化率χ （2）ε-InSe的ε值大于ε-GaSe和单层TMD的值。我们的研究提供了有关ε-InSe相位识别的第一手信息，并为非线性光学（NLO）应用以及通过合金化工程SHG响应的可能性提供了极佳的候选者。
更新日期：2019-03-06
中文翻译：
纯ε-InSe及其合金的相识别和强二次谐波生成
二维材料硒化铟（InSe）凭借其令人着迷的迷人特性为基础研究提供了新的平台。与2H相过渡金属二卤化金属（TMD）不同，具有六边形晶胞的ε相InSe在所有层数上均具有破碎的反转对称性，并预计具有很强的二次谐波生成（SHG）效应。在这项工作中，我们发现所制备的纯InSe，合金化的InSe 1– x Te x和InSe 1– x S x（x= 0.1和0.2）是ε相结构，并且从几层到大块状尺寸都显示出出色的SHG性能。如此高的SHG效率归因于ε-InSe系统的非中心对称晶体结构，该结构已通过像差校正扫描透射电子显微镜（STEM）图像进行了清晰验证。实验结果表明，多层纯ε-InSe和合金化InSe 0.9 Te 0.1和InSe 1- x S x（x = 0.1和0.2）的SHG强度比单层TMD系统高约1-2个数量级。甚至优于相同厚度的GaSe。估计的非线性磁化率χ （2）ε-InSe的ε值大于ε-GaSe和单层TMD的值。我们的研究提供了有关ε-InSe相位识别的第一手信息，并为非线性光学（NLO）应用以及通过合金化工程SHG响应的可能性提供了极佳的候选者。
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