Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS₂) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS₂ atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS₂ atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS₂ FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS₂ device structures. The photoluminescence (PL) of MoS₂ atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS₂ transistors. The review discusses the overall recent progress made in developing MoS₂ based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.

中文翻译：

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可穿戴电子和光电产品的柔性二硫化钼（MoS ₂）原子层

柔性，可拉伸和可弯曲的材料，包括无机半导体，有机聚合物，石墨烯和过渡金属二硫化碳（TMD），在可穿戴电子，生物医学技术，可折叠显示器和可穿戴医疗点生物传感器等领域引起了极大关注。用于医疗保健。在广泛的层状TMD中，由于原子薄层的二硫化钼（MoS ₂）具有非凡的电子性能，包括可调带隙和电荷载流子迁移率，因此引起了人们的特别关注。硫化钼₂原子层可用作制造电子和光电设备的原子薄场效应晶体管（FET）的通道或栅极电介质。本文简要介绍了大面积MoS ₂原子薄层的处理和光谱表征。该综述总结了通过将高κ电介质，封装层和其他2D范德华分层材料集成到柔性MoS ₂器件结构中来提高MoS ₂ FET的电荷载流子迁移率和开关速度的不同策略。MoS ₂的光致发光（PL）经过化学处理后，原子层已显着提高了接近统一的量子产率。超柔性可穿戴有源矩阵有机发光二极管（AM-OLED）显示器和晶圆级柔性电阻式随机存取存储器（RRAM）阵列已使用柔性MoS ₂晶体管组装而成。该评论讨论了开发基于MoS ₂的柔性FET，OLED显示器，非易失性存储器（NVM）器件，压电纳米发电机（PNG）以及可穿戴电子和光电设备传感器的最新进展。最后，它概述了一大类原子薄层TMD的观点和巨大机遇。