In this study, the blue light-emitting diode (LED) structures based on gallium nitride (GaN) were presented. Each structure possessed a surface GaN p-n junction, which was formed through selective area regrowth on an InGaN/GaN multiple quantum well (MQW) structure and served as the carrier injector. The LEDs that showed efficient hole injection and current spreading were configured to form a p-type GaN layer between the MQW and regrown n-type GaN top layer. These LEDs exhibited higher luminous efficiency and lower operation voltage than the LEDs with regrown p-type GaN top layers. The LEDs with n-type GaN top layers emitted single-peak spectra at approximately 450 nm under a forward bias. The UV peak at 365 nm (i.e., the GaN band-edge emission) was absent because the regrown surface GaN p-n junctions behaved as carrier injectors rather than photon injectors. In other words, the single-peak blue emission was not generated by the optical pumping of UV light emitted from the surface p-n GaN homojunction.

中文翻译：

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具有通过选择性区域再生长形成的表面氮化镓pn同质结结构的发光二极管。

在这项研究中，提出了基于氮化镓（GaN）的蓝色发光二极管（LED）结构。每个结构均具有表面GaN pn结，该表面通过在InGaN / GaN多量子阱（MQW）结构上进行选择性区域再生而形成，并用作载流子注入器。显示有效空穴注入和电流扩散的LED配置为在MQW和再生长的n型GaN顶层之间形成p型GaN层。与具有再生的p型GaN顶层的LED相比，这些LED表现出更高的发光效率和更低的工作电压。具有n型GaN顶层的LED在正向偏压下发出约450 nm的单峰光谱。365 nm处的UV峰（即，由于重新生长的表面GaN pn结起载流子注入器的作用，而不是光子注入器，因此没有GaN带边缘发射）。换句话说，通过从表面pn GaN同质结发射的UV光的光泵浦不会产生单峰蓝色发射。