Post-Treatment-Free Solution-Processed Reduced Phosphomolybdic Acid Containing Molybdenum Oxide Units for Efficient Hole-Injection Layers in Organic Light-Emitting Devices,Inorganic Chemistry

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Post-Treatment-Free Solution-Processed Reduced Phosphomolybdic Acid Containing Molybdenum Oxide Units for Efficient Hole-Injection Layers in Organic Light-Emitting Devices
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2018-02-08 00:00:00 , DOI: 10.1021/acs.inorgchem.7b02842
Satoru Ohisa ₁ , Kohei Endo ₁ , Kosuke Kasuga ₁ , Michinori Suzuki ₁ , Takayuki Chiba ₁ , Yong-Jin Pu ₁ , Junji Kido ₁

Affiliation

We report the development of solution-processed reduced phosphomolybdic acid (rPMA) containing molybdenum oxide units for post-treatment-free hole-injection layers (HILs) in organic light-emitting devices (OLEDs). The physical and chemical properties of rPMA, including its structure, solubility in several solvents, film surface roughness, work function, and valence states, were investigated. The formation of gap states just below the Fermi level of rPMA was observed. Without any post-treatment after the formation of rPMA films, OLEDs employing rPMA as an HIL exhibited a very low driving voltage and a high luminous efficiency. The low driving voltage was attributed to the energy level alignment between the gap states formed by reduction and the HOMO level of the hole-transport layer material N,N′-bis(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine.

中文翻译：

用于有机发光器件中高效空穴注入层的无后处理溶液处理的还原型含磷钼酸的磷钼酸单元

我们报道了有机发光器件（OLEDs）中无后处理空穴注入层（HIL）的含钼氧化物单元的溶液处理的还原型磷钼酸（rPMA）的发展。研究了rPMA的物理和化学性质，包括其结构，在几种溶剂中的溶解度，膜表面粗糙度，功函数和价态。观察到间隙状态的形成恰好在rPMA的费米能级以下。在形成rPMA膜之后没有任何后处理，采用rPMA作为HIL的OLED显示出非常低的驱动电压和高的发光效率。低驱动电压归因于通过还原形成的间隙状态与空穴传输层材料N，N的HOMO能级之间的能级对准。′-双（1-萘基）-N，N′-二苯基-（1，1′-联苯）-4，4′-二胺。

更新日期：2018-02-08

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