Converting the Conducting Behavior of Graphene Oxides from n-Type to p-Type via Electron-Beam Irradiation,ACS Applied Materials & Interfaces

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Converting the Conducting Behavior of Graphene Oxides from n-Type to p-Type via Electron-Beam Irradiation
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-02-20 00:00:00 , DOI: 10.1021/acsami.7b16458
Ali Mirzaei ₁ , Yong Jung Kwon ₂ , Ping Wu ₃ , Sang Sub Kim ₄ , Hyoun Woo Kim _{1,

5}

Affiliation

We studied the effects of electron-beam irradiation (EBI) on the structural and gas-sensing properties of graphene oxide (GO). To understand the effects of EBI on the structure and gas-sensing behavior of irradiated GO, the treated GO was compared with nonirradiated GO. Characterization results indicated an enhancement in the number of oxygen functional groups that occurs with EBI exposure at 100 kGy and then decreases with doses in the range of 100–500 kGy. Data from Raman spectra indicated that EBI could generate defects, and NO₂-sensing results at room temperature showed a decreased NO₂ response after exposure to EBI at 100 kGy; further increasing the dose to 500 kGy resulted in p-type semiconducting conductivity. The conversion of GO from n-type to p-type via EBI is explained not only through the generation of holes but also the variation in the amount of residual functional groups, including carboxyl (COOH) and hydroxyl groups (C–OH). The obtained results suggest that EBI can be a useful tool to convert GO into a diverse range of sensing devices.

中文翻译：

通过电子束辐照将氧化石墨烯的导电行为从n型转变为p型

我们研究了电子束辐照（EBI）对氧化石墨烯（GO）的结构和气敏特性的影响。为了了解EBI对辐照GO的结构和气敏行为的影响，将经过处理的GO与未辐照的GO进行了比较。表征结果表明，在100 kGy的EBI暴露下，氧官能团的数量增加，然后在100–500 kGy的剂量范围内降低。拉曼光谱数据表明，EBI可能会产生缺陷，室温下的NO ₂传感结果表明NO ₂减少了。暴露于100 kGy的EBI后的反应; 进一步将剂量增加到500 kGy会产生p型半导体电导率。通过EBI将GO从n型转变为p型的方法不仅是通过生成空穴来解释，而且还包括包括羧基（COOH）和羟基（C-OH）在内的残余官能团数量的变化。获得的结果表明，EBI可以成为将GO转换为多种传感设备的有用工具。

更新日期：2018-02-20

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