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Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO–Ga2O3 Alloys with Widely Tunable Electronic Bands
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-02-12 00:00:00 , DOI: 10.1021/acsami.7b18254 Chao Ping Liu 1 , Chun Yuen Ho 1 , Roberto dos Reis 2 , Yishu Foo 3 , Peng Fei Guo 1, 4 , Juan Antonio Zapien 3 , Wladek Walukiewicz 5 , Kin Man Yu 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-02-12 00:00:00 , DOI: 10.1021/acsami.7b18254 Chao Ping Liu 1 , Chun Yuen Ho 1 , Roberto dos Reis 2 , Yishu Foo 3 , Peng Fei Guo 1, 4 , Juan Antonio Zapien 3 , Wladek Walukiewicz 5 , Kin Man Yu 1
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In this work, we have synthesized Cd1–xGaxO1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd1–xGaxO1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10–20 cm2 V–1 s–1 with a resistivity in the range of 10–2 to high 10–4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10–4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2–4.8 eV as well as a conduction band minimum range of 5.8–4.5 eV below the vacuum level. Our results suggest that amorphous Cd1–xGaxO1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.
中文翻译：
室温合成的高迁移率透明可调谐电子带的高迁移率透明非晶CdO-Ga 2 O 3合金
在这项工作中，我们通过射频磁控溅射在整个组成范围内，在室温下合成了Cd 1– x Ga x O 1 +δ合金薄膜。我们发现，高Ga含量x > 0.3的合金膜是非晶态的。0.3 < x <0.5范围内的非晶Cd 1– x Ga x O 1 +δ合金具有10–20 cm 2 V –1 s –1的高电子迁移率，电阻率在10 –2至2的范围内。高10 –4Ωcm范围。通过控制氧的化学计量，非晶态合金的电阻率也可以控制在5个数量级的范围内，从7×10 –4到77Ωcm。在整个组成范围内，这些结晶和非晶态合金的可调节本征带隙范围较大，为2.2–4.8 eV，在真空度以下的导带最小范围为5.8–4.5 eV。我们的结果表明，0.3 < x <0.4的非晶Cd 1– x Ga x O 1 +δ合金膜具有良好的光电性能，可作为柔性和/或有机基板上的透明导体，而0.3和<0.3的膜的带边和电导率X 对于透明薄膜晶体管以及电子传输层，可以控制<0.7。
更新日期：2018-02-12
中文翻译：
室温合成的高迁移率透明可调谐电子带的高迁移率透明非晶CdO-Ga 2 O 3合金
在这项工作中，我们通过射频磁控溅射在整个组成范围内，在室温下合成了Cd 1– x Ga x O 1 +δ合金薄膜。我们发现，高Ga含量x > 0.3的合金膜是非晶态的。0.3 < x <0.5范围内的非晶Cd 1– x Ga x O 1 +δ合金具有10–20 cm 2 V –1 s –1的高电子迁移率，电阻率在10 –2至2的范围内。高10 –4Ωcm范围。通过控制氧的化学计量，非晶态合金的电阻率也可以控制在5个数量级的范围内，从7×10 –4到77Ωcm。在整个组成范围内，这些结晶和非晶态合金的可调节本征带隙范围较大，为2.2–4.8 eV，在真空度以下的导带最小范围为5.8–4.5 eV。我们的结果表明，0.3 < x <0.4的非晶Cd 1– x Ga x O 1 +δ合金膜具有良好的光电性能，可作为柔性和/或有机基板上的透明导体，而0.3和<0.3的膜的带边和电导率X 对于透明薄膜晶体管以及电子传输层，可以控制<0.7。
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