Strain Modulation by van der Waals Coupling in Bilayer Transition Metal Dichalcogenide,ACS Nano

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Strain Modulation by van der Waals Coupling in Bilayer Transition Metal Dichalcogenide
ACS Nano ( IF 15.8 ) Pub Date : 2018-02-05 00:00:00 , DOI: 10.1021/acsnano.7b09029
Xiaoxu Zhao _{1,

2} , Zijing Ding ₁ , Jianyi Chen ₁ , Jiadong Dan _{2,

3} , Sock Mui Poh _{1,

2} , Wei Fu ₁ , Stephen J. Pennycook _{2,

3} , Wu Zhou ₄ , Kian Ping Loh ₁

Affiliation

Manipulation of lattice strain is emerging as a powerful means to modify the properties of low-dimensional materials. Most approaches rely on external forces to induce strain, and the role of interlayer van der Waals (vdW) coupling in generating strain profiles in homobilayer transition metal dichalcogenide (TMDC) films is rarely considered. Here, by applying atomic-resolution electron microscopy and density functional theory calculations, we observed that a mirror twin boundary (MTB) modifies the interlayer vdW coupling in bilayer TMDC films, leading to the development of local strain for a few nanometers in the vicinity of the MTB. Interestingly, when a single MTB in one layer is “paired” with another MTB in an adjacent layer, interlayer-induced strain is reduced when the MTBs approach each other. Therefore, MTBs are not just 1D discontinuities; they can exert localized 2D strain on the adjacent lattices.

中文翻译：

双层过渡金属二硫属元素化物中范德华耦合的应变调制

晶格应变的操纵正在成为一种改变低维材料性能的有力手段。大多数方法依赖于外力来诱发应变，并且很少考虑层间范德华（vdW）耦合在生成同质双层过渡金属二卤化金属（TMDC）薄膜中的应变曲线中的作用。在这里，通过应用原子分辨率电子显微镜和密度泛函理论计算，我们观察到镜面孪晶边界（MTB）修改了双层TMDC膜中的层间vdW耦合，从而导致在纳米附近产生了几纳米的局部应变。 MTB。有趣的是，当一层中的单个MTB与相邻层中的另一个MTB“配对”时，当MTB彼此接近时，层间感应应变会降低。因此，MTB不仅是一维不连续点；

更新日期：2018-02-05

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