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Influence of Surface Orientation on Electrochemical Properties of Boron-Doped Diamond
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2019-02-26 , DOI: 10.1021/acs.jpcc.8b10406 Tribidasari A. Ivandini 1 , Takeshi Watanabe 2 , Takahiro Matsui 3 , Yusuke Ootani 4 , Shota Iizuka 5 , Ryo Toyoshima 3 , Hideyuki Kodama 2 , Hiroshi Kondoh 3 , Yoshitaka Tateyama 5 , Yasuaki Einaga 3, 6
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2019-02-26 , DOI: 10.1021/acs.jpcc.8b10406 Tribidasari A. Ivandini 1 , Takeshi Watanabe 2 , Takahiro Matsui 3 , Yusuke Ootani 4 , Shota Iizuka 5 , Ryo Toyoshima 3 , Hideyuki Kodama 2 , Hiroshi Kondoh 3 , Yoshitaka Tateyama 5 , Yasuaki Einaga 3, 6
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To study the influence of crystal orientation on the electrochemical properties of boron-doped diamond (BDD), electrodes comprising (100) and (111) homoepitaxial single-crystal layers of BDD were investigated and these were compared with a thin polycrystalline BDD electrode. The BDD samples with similar amounts of boron of around 1020 cm–3 and resistivity of around 6 × 10–3 Ω cm were prepared. Evaluation of the electrochemical reactivity of each of the samples with both H- and O-terminated surfaces showed that polycrystalline BDD was the most reactive, whereas the (111) samples proved to be more reactive than the (100) ones for single-crystal BDD. Moreover, considering the results of first-principles molecular dynamics simulations, it is proposed that surface transfer doping is the dominating factor for H-terminated surfaces, whereas the degree of band bending and the thickness of the space-charge layer are the dominating factors for O-terminated surfaces.
中文翻译：
表面取向对掺硼金刚石电化学性能的影响
为了研究晶体取向对掺硼金刚石（BDD）电化学性能的影响，研究了包含（100）和（111）BDD同质外延单晶层的电极，并将其与薄的多晶BDD电极进行了比较。BDD样品中的硼含量相似，约为10 20 cm –3，电阻率约为6×10 –3准备Ω·cm。对每个具有H和O端接表面的样品的电化学反应性的评估表明，多晶BDD的反应性最高，而（111）样品被证明比（100）单晶BDD的反应性更高。 。此外，考虑到第一性原理分子动力学模拟的结果，提出表面转移掺杂是氢封端表面的主要因素，而带弯曲度和空间电荷层的厚度是主要因素。 O端接的表面。
更新日期：2019-02-27
中文翻译：
表面取向对掺硼金刚石电化学性能的影响
为了研究晶体取向对掺硼金刚石（BDD）电化学性能的影响，研究了包含（100）和（111）BDD同质外延单晶层的电极，并将其与薄的多晶BDD电极进行了比较。BDD样品中的硼含量相似，约为10 20 cm –3，电阻率约为6×10 –3准备Ω·cm。对每个具有H和O端接表面的样品的电化学反应性的评估表明，多晶BDD的反应性最高，而（111）样品被证明比（100）单晶BDD的反应性更高。 。此外，考虑到第一性原理分子动力学模拟的结果，提出表面转移掺杂是氢封端表面的主要因素，而带弯曲度和空间电荷层的厚度是主要因素。 O端接的表面。
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