Chemical Vapor Deposition Growth of Vertical MoS2 Nanosheets on p-GaN Nanorods for Photodetector Application,ACS Applied Materials & Interfaces

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Chemical Vapor Deposition Growth of Vertical MoS2 Nanosheets on p-GaN Nanorods for Photodetector Application
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-02-11 00:00:00 , DOI: 10.1021/acsami.8b22344
Guofeng Yang ₁ , Yan Gu ₁ , Pengfei Yan ₁ , Jin Wang ₁ , Junjun Xue ₂ , Xiumei Zhang ₁ , Naiyan Lu ₁ , Guoqing Chen ₁

Affiliation

Vertically oriented multilayered MoS₂ nanosheets were successfully grown on p-GaN nanorod substrate using chemical vapor deposition (CVD) method. The p-GaN nanorod substrate was fabricated by dry etching employing self-assembled nickel (Ni) nanopartical as mask. Photoluminescence (PL) and Raman characterizations demonstrate the multilayered structure of MoS₂ nanosheet growth on p-GaN nanorods as compared with the referential monolayer MoS2 on GaN wafer substrate under the same growth procedure. The growth model of vertical MoS2 nanosheet formed on GaN nanorods is evidently proposed according to the first-principle calculations. More importantly, it is demonstrated here that the as-grown vertical MoS₂ nanosheets/p-GaN nanorod heterostructure holds promising applications in photodetector device, where high optical gain and broad spectral response in the visible range have been obtained.

中文翻译：

用于光电探测器的p-GaN纳米棒上垂直MoS ₂纳米片的化学气相沉积生长

使用化学气相沉积（CVD）方法在p-GaN纳米棒衬底上成功生长了垂直取向的多层MoS ₂纳米片。通过使用自组装镍（Ni）纳米颗粒作为掩模的干法刻蚀来制造p-GaN纳米棒基板。光致发光（PL）和拉曼光谱表征表明，与在相同生长程序下在GaN晶片衬底上的参考单层MoS2相比，p-GaN纳米棒上MoS ₂纳米片生长的多层结构。根据第一性原理计算，显然提出了在GaN纳米棒上形成垂直MoS2纳米片的生长模型。更重要的是，这里证明了垂直生长的MoS ₂ 纳米片/ p-GaN纳米棒异质结构在光检测器设备中具有广阔的应用前景，其中在可见光范围内获得了高光学增益和宽光谱响应。

更新日期：2019-02-11

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