Thermoelectric Performance of 2D Tellurium with Accumulation Contacts,Nano Letters

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Thermoelectric Performance of 2D Tellurium with Accumulation Contacts
Nano Letters ( IF 9.6 ) Pub Date : 2019-02-12 00:00:00 , DOI: 10.1021/acs.nanolett.8b05144
Gang Qiu _{1,

2} , Shouyuan Huang _{2,

3} , Mauricio Segovia _{2,

3} , Prabhu K. Venuthurumilli _{2,

3} , Yixiu Wang ₄ , Wenzhuo Wu ₄ , Xianfan Xu _{1,

2,

3} , Peide D. Ye _{1,

2}

Affiliation

Tellurium (Te) is an intrinsically p-type-doped narrow-band gap semiconductor with an excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an outstanding thermoelectric material with a high value of thermoelectric figure-of-merit ZT. In view of the recent progress in developing the synthesis route of 2D tellurium thin films as well as the growing trend of exploiting nanostructures as thermoelectric devices, here for the first time, we report the excellent thermoelectric performance of tellurium nanofilms, with a room-temperature power factor of 31.7 μW/cm K² and ZT value of 0.63. To further enhance the efficiency of harvesting thermoelectric power in nanofilm devices, thermoelectrical current mapping was performed with a laser as a heating source, and we found that high work function metals such as palladium can form rare accumulation-type metal-to-semiconductor contacts to Te, which allows thermoelectrically generated carriers to be collected more efficiently. High-performance thermoelectric Te devices have broad applications as energy harvesting devices or nanoscale Peltier coolers in microsystems.

中文翻译：

带有累积触点的2D碲的热电性能

碲（Te）是本征p型掺杂的窄带隙半导体，具有出色的导电性和低导热性。在理论上已经预测了块状三角形Te，并通过实验证明了它是一种出色的热电材料，具有很高的热电品质因数ZT。鉴于2D碲薄膜的合成路线的最新进展以及将纳米结构用作热电器件的增长趋势，在此，我们首次在室温下报道了碲纳米膜的出色热电性能。功率因数31.7μW/ cm K ²并且ZT值为0.63。为了进一步提高在纳米膜器件中收集热电的效率，使用激光作为加热源进行了热电电流映射，我们发现高功函数金属（例如钯）可以形成稀有的累积型金属与半导体的接触。 Te，可以更有效地收集热电产生的载流子。高性能热电Te器件作为能量收集设备或微系统中的纳米级Peltier冷却器具有广泛的应用。

更新日期：2019-02-12

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