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Zn-Alloyed CsPbI3 Nanocrystals for Highly Efficient Perovskite Light-Emitting Devices
Nano Letters ( IF 9.6 ) Pub Date : 2019-02-11 00:00:00 , DOI: 10.1021/acs.nanolett.8b04339
Xinyu Shen , Yu Zhang , Stephen V. Kershaw 1 , Tianshu Li , Congcong Wang , Xiaoyu Zhang , Wenyan Wang , Daguang Li , Yinghui Wang , Min Lu , Lijun Zhang , Chun Sun , Dan Zhao , Guanshi Qin , Xue Bai , William W. Yu 2 , Andrey L. Rogach 1, 3
Nano Letters ( IF 9.6 ) Pub Date : 2019-02-11 00:00:00 , DOI: 10.1021/acs.nanolett.8b04339
Xinyu Shen , Yu Zhang , Stephen V. Kershaw 1 , Tianshu Li , Congcong Wang , Xiaoyu Zhang , Wenyan Wang , Daguang Li , Yinghui Wang , Min Lu , Lijun Zhang , Chun Sun , Dan Zhao , Guanshi Qin , Xue Bai , William W. Yu 2 , Andrey L. Rogach 1, 3
Affiliation
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We alloyed Zn2+ into CsPbI3 perovskite nanocrystals by partial substitution of Pb2+ with Zn2+, which does not change their crystalline phase. The resulting alloyed CsPb0.64Zn0.36I3 nanocrystals exhibited an improved, close-to-unity photoluminescence quantum yield of 98.5% due to the increased radiative decay rate and the decreased non-radiative decay rate. They also showed an enhanced stability, which correlated with improved effective Goldschmidt tolerance factors, by the incorporation of Zn2+ ions with a smaller radius than the Pb2+ ions. Simultaneously, the nanocrystals switched from n-type (for CsPbI3) to nearly ambipolar for the alloyed nanoparticles. The hole injection barrier of electroluminescent LEDs was effectively eliminated by using alloyed CsPb0.64Zn0.36I3 nanocrystals, and a high peak external quantum efficiency of 15.1% has been achieved.
中文翻译:
用于高效钙钛矿发光器件的锌合金CsPbI 3纳米晶体
通过将Zn 2+部分取代Pb 2+,将Zn 2+合金化为CsPbI 3钙钛矿纳米晶体,这不会改变其结晶相。所得的合金化的CsPb 0.64 Zn 0.36 I 3纳米晶体由于增加的辐射衰减率和降低的非辐射衰减率而表现出改进的,接近整体的光致发光量子产率为98.5%。通过掺入半径比Pb 2+离子小的Zn 2+离子,它们还显示出增强的稳定性,与提高的有效Goldschmidt耐受因子相关。同时,纳米晶体从n型(对于CsPbI 3)几乎为双极性。通过使用合金化的CsPb 0.64 Zn 0.36 I 3纳米晶体,有效消除了电致发光LED的空穴注入势垒,并且实现了15.1%的高峰值外部量子效率。
更新日期:2019-02-11
中文翻译:

用于高效钙钛矿发光器件的锌合金CsPbI 3纳米晶体
通过将Zn 2+部分取代Pb 2+,将Zn 2+合金化为CsPbI 3钙钛矿纳米晶体,这不会改变其结晶相。所得的合金化的CsPb 0.64 Zn 0.36 I 3纳米晶体由于增加的辐射衰减率和降低的非辐射衰减率而表现出改进的,接近整体的光致发光量子产率为98.5%。通过掺入半径比Pb 2+离子小的Zn 2+离子,它们还显示出增强的稳定性,与提高的有效Goldschmidt耐受因子相关。同时,纳米晶体从n型(对于CsPbI 3)几乎为双极性。通过使用合金化的CsPb 0.64 Zn 0.36 I 3纳米晶体,有效消除了电致发光LED的空穴注入势垒,并且实现了15.1%的高峰值外部量子效率。