The multilayer HfSe₂ on sapphire is first fabricated by the ion beam‐assisted process combining ion implantation with the post annealing. The A_1g mode of HfSe₂ is shown in the Raman spectrum, the X‐ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe₂. The six‐layered (6L) octahedral HfSe₂ (1T‐HfSe₂), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.

中文翻译：

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离子注入在蓝宝石上合成的多层HfSe2的光致发光特性

蓝宝石上的多层HfSe ₂首先是通过离子束辅助工艺结合离子注入和后退火来制造的。HfSe ₂的A _1g模式在拉曼光谱中显示，X射线光电子能谱结果表明存在Hf-Se键，并且透射电子显微镜分析准确地鉴定了HfSe ₂的晶体结构。六层（6L）八面体HfSe ₂（1T-HfSe ₂）是通过退火过程中的Hf硒化而形成的，通过利用光致发光光谱与密度泛函理论计算的结果相比较，可以很好地实现其能带结构。