晶圆级二硫化铂的制备策略,ACS Applied Materials & Interfaces

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晶圆级二硫化铂的制备策略
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-02-07 00:00:00 , DOI: 10.1021/acsami.8b19218
Hongjun Xu,Hsin-Pan Huang,HaiFeng Fei,Jiafeng Feng,Huei-Ru Fuh,Jiung Cho,Miri Choi,Yanhui Chen,Lei Zhang,Dengyun Chen,Duan Zhang,Cormac Ó Coileáin,Xiufeng Han,Ching-Ray Chang,Han-Chun Wu

PtS ₂是一种新开发的10组2D层状材料，具有高载流子迁移率，宽带隙可调谐性，强束缚激子，对称的金属和磁性边缘态以及环境稳定性，使其在纳米电子，光电和自旋电子学领域具有吸引力。为了应用的目的，大规模合成是必要的。对于过渡金属二硫化氢（TMD）化合物，热辅助转换方法已被广泛用于制造晶圆级薄膜。然而，由于四方PtS相更稳定，因此使用该方法不能容易地合成PtS ₂。在这里，我们使用指定的石英部件来局部增加化学气相沉积炉中硫的蒸气压，并成功地将此方法扩展为PtS的合成₂片薄膜，具有可缩放和可控制的方式。而且，PtS和PtS ₂相可以通过提出的策略互换转换。场效应晶体管的表征和光电流测量表明，PtS ₂是具有窄带隙的双极性半导体。此外，PtS ₂还显示出优异的气敏性能，对NO ₂的检测极限为〜0.4 ppb 。我们的工作提出了一种合成PtS ₂薄膜的相对简单的方法，并以可扩展的方式展示了它们对高性能超灵敏气体传感，宽带光电和纳米电子学的承诺。此外，建议的策略适用于制作其他PtX ₂ 与现代硅技术兼容的化合物和TMD。

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Strategy for Fabricating Wafer-Scale Platinum Disulfide

PtS₂ is a newly developed group 10 2D layered material with high carrier mobility, wide band gap tunability, strongly bound excitons, symmetrical metallic and magnetic edge states, and ambient stability, making it attractive in nanoelectronic, optoelectronic, and spintronic fields. To the aim of application, a large-scale synthesis is necessary. For transition-metal dichalcogenide (TMD) compounds, a thermally assisted conversion method has been widely used to fabricate wafer-scale thin films. However, PtS₂ cannot be easily synthesized using the method, as the tetragonal PtS phase is more stable. Here, we use a specified quartz part to locally increase the vapor pressure of sulfur in a chemical vapor deposition furnace and successfully extend this method for the synthesis of PtS₂ thin films in a scalable and controllable manner. Moreover, the PtS and PtS₂ phases can be interchangeably converted through a proposed strategy. Field-effect transistor characterization and photocurrent measurements suggest that PtS₂ is an ambipolar semiconductor with a narrow band gap. Moreover, PtS₂ also shows excellent gas-sensing performance with a detection limit of ∼0.4 ppb for NO₂. Our work presents a relatively simple way of synthesizing PtS₂ thin films and demonstrates their promise for high-performance ultrasensitive gas sensing, broadband optoelectronics, and nanoelectronics in a scalable manner. Furthermore, the proposed strategy is applicable for making other PtX₂ compounds and TMDs which are compatible with modern silicon technologies.

更新日期：2019-02-07

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