We report a new atomic layer deposition (ALD) process for yttrium oxide (Y₂O₃) thin films using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(III) [Y(DPDMG)₃] which possesses an optimal reactivity towards water that enabled the growth of high quality thin films. Saturative behavior of the precursor and a constant growth rate of 1.1 Å per cycle confirm the characteristic self-limiting ALD growth in a temperature range from 175 °C to 250 °C. The polycrystalline films in the cubic phase are uniform and smooth with a root mean squared (RMS) roughness of 0.55 nm, while the O/Y ratio of 2.0 reveal oxygen rich layers with low carbon contaminations of around 2 at%. Optical properties determined via UV/Vis measurements revealed the direct optical band gap of 5.56 eV. The valuable intrinsic properties such as a high dielectric constant make Y₂O₃ a promising candidate in microelectronic applications. Thus the electrical characteristics of the ALD grown layers embedded in a metal insulator semiconductor (MIS) capacitor structure were determined which resulted in a dielectric permittivity of 11, low leakage current density (≈10⁻⁷ A cm⁻² at 2 MV cm⁻¹) and high electrical breakdown fields (4.0–7.5 MV cm⁻¹). These promising results demonstrate the potential of the new and simple Y₂O₃ ALD process for gate oxide applications.

中文翻译：

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使用 tris(N,N'-diisopropyl-2-dimethylamido-guanidinato) 钇 (iii) 的水辅助原子层沉积氧化钇：工艺开发、薄膜表征和功能特性†

我们报告了一种使用三（ N，N'-二异丙基-2-二甲基氨基-胍基）钇（III）[Y（DPDMG）_{3的氧化钇（Y 2} O ₃）薄膜的新原子层沉积（ALD）工艺] 它对水具有最佳反应性，可以生长高质量的薄膜。前体的饱和行为和每循环 1.1 Å 的恒定生长速率证实了在 175°C 至 250°C 的温度范围内的特征性自限 ALD 生长。立方相中的多晶薄膜均匀且光滑，均方根 (RMS) 粗糙度为 0.55 nm，而 O/Y 比为 2.0 则显示富含氧的层，低碳污染约为 2 at%。通过UV/Vis 测量确定的光学特性揭示了 5.56 eV 的直接光学带隙。高介电常数等宝贵的固有特性使 Y ₂ O ₃微电子应用中很有前途的候选者。因此，确定了嵌入金属绝缘体半导体 (MIS) 电容器结构中的 ALD 生长层的电特性，这导致介电常数为 11，漏电流密度低（在 2 MV cm ^{-1时约为 10 -7} A cm ^-2 ) 和高电击穿场 (4.0–7.5 MV cm ^-1 )。这些有希望的结果证明了新的简单 Y ₂ O ₃ ALD 工艺在栅极氧化物应用中的潜力。