Sub 10 nm Bilayer Bi2O2Se Transistors,Advanced Electronic Materials

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Sub 10 nm Bilayer Bi2O2Se Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-02-04 , DOI: 10.1002/aelm.201800720
Jie Yang ₁ , Ruge Quhe ₂ , Qiuhui Li ₂ , Shiqi Liu ₁ , Lianqiang Xu _{1,

2,

3} , Yuanyuan Pan ₁ , Han Zhang ₁ , Xiuying Zhang ₁ , Jingzhen Li ₁ , Jiahuan Yan ₁ , Bowen Shi ₁ , Hua Pang ₁ , Lin Xu ₄ , Zhiyong Zhang ₄ , Jing Lu _{1,

5,

6} , Jinbo Yang _{1,

5,

6}

Affiliation

Due to high carrier mobility and excellent air stability, emerging 2D semiconducting Bi₂O₂Se is attracting much attention as a potential channel candidate for the next‐generation field effect transistor (FETs). Although the fabricated bilayer (BL) and few layers Bi₂O₂Se FETs exhibit a large current on/off ratio (>10⁶) and a near‐ideal subthreshold swing value (≈65 mV dec⁻¹), the performance limit of ultrashort channel Bi₂O₂Se FET is obscure. Here the ballistic performance upper limit of the sub 10 nm BL Bi₂O₂Se metal‐oxide‐semiconductor FETs (MOSFETs) is simulated for the first time by using ab initio quantum transport simulations. The optimized BL Bi₂O₂Se n‐type MOSFETs can fulfill the high performance device requirements on the on‐state current, delay time, and power dissipation of the International Technology Roadmap for Semiconductors in 2028 until the gate length is scaled down to 5 nm. Therefore, Moore's law can be extended to 5 nm by taking BL Bi₂O₂Se as the channel.

中文翻译：

低于10 nm的Bi2O2Se双层晶体管

由于高的载流子迁移率和出色的空气稳定性，新兴的2D半导体Bi ₂ O ₂ Se作为下一代场效应晶体管（FET）的潜在沟道候选者引起了广泛的关注。尽管制造的双层（BL）和少量的Bi ₂ O ₂ Se FET表现出大的电流开/关比（> 10 ⁶）和接近理想的亚阈值摆幅值（≈65mV dec ^-1），但其性能极限为超短通道Bi ₂ O ₂ Se FET晦涩难懂。低于10 nm BL Bi ₂ O ₂的弹道性能上限硒金属氧化物半导体场效应晶体管（MOSFET）首次使用从头算起的量子传输模拟进行了模拟。经过优化的BL Bi ₂ O ₂ Se n型MOSFET可以满足2028年国际半导体技术路线图对导通电流，延迟时间和功耗的高性能器件要求，直到栅极长度减小到5为止。纳米因此，以BL Bi ₂ O ₂ Se为沟道可以将摩尔定律扩展到5 nm 。

更新日期：2019-02-04

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