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Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors
Small ( IF 13.0 ) Pub Date : 2019-02-01 , DOI: 10.1002/smll.201805307 Zongpeng Ma 1 , Shouning Chai 2 , Qingliang Feng 3 , Liang Li 4 , Xiaobo Li 1 , Lingli Huang 1 , Dongyan Liu 1 , Jie Sun 1 , Ruibin Jiang 1 , Tianyou Zhai 5 , Hua Xu 1
Small ( IF 13.0 ) Pub Date : 2019-02-01 , DOI: 10.1002/smll.201805307 Zongpeng Ma 1 , Shouning Chai 2 , Qingliang Feng 3 , Liang Li 4 , Xiaobo Li 1 , Lingli Huang 1 , Dongyan Liu 1 , Jie Sun 1 , Ruibin Jiang 1 , Tianyou Zhai 5 , Hua Xu 1
Affiliation
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Low‐dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb2Se3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb2Se3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle‐resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb2Se3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb2Se3 NW exhibit a wide spectral photoresponse range from visible to NIR (400–900 nm). Owing to the high crystallinity of Sb2Se3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W−1, and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb2Se3 NW, the device exhibits polarization‐dependent photoresponse. The high crystallinity and superior anisotropy of Sb2Se3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.
中文翻译：
用于近红外光电探测器的具有强各向异性的高结晶度Sb2Se3纳米线的化学气相沉积生长
低维半导体因其独特的结构和卓越的性能而引起了人们的极大关注，这使其成为具有广阔前景的材料，可广泛用于与电子和光电子相关的应用。本文中，报道了通过化学气相沉积生长制备具有高晶体质量的1D Sb 2 Se 3纳米线（NWs）。所获得的Sb 2 Se 3 NW具有三棱柱形态，长径比为2至200，并且在六重对称云母基板上可以实现三个主晶格取向。角分辨偏振拉曼光谱测量显示出Sb 2 Se 3的强各向异性NW，也被开发用来识别其晶体取向。此外，基于Sb 2 Se 3 NW的光电探测器表现出从可见光到NIR（400-900 nm）的宽光谱光响应范围。由于Sb 2 Se 3 NW的高结晶度，光电检测器获得约405的光电流开/关比，5100 mA W -1的响应度以及约32和5 ms的快速上升和下降时间。此外，由于Sb 2 Se 3 NW的各向异性结构，该器件表现出偏振相关的光响应。Sb 2 Se 3的高结晶度和优异的各向异性 NW，加上可控的准备工作，使其在构造多功能光电器件方面具有巨大的潜力。
更新日期：2019-02-01
中文翻译：
用于近红外光电探测器的具有强各向异性的高结晶度Sb2Se3纳米线的化学气相沉积生长
低维半导体因其独特的结构和卓越的性能而引起了人们的极大关注，这使其成为具有广阔前景的材料，可广泛用于与电子和光电子相关的应用。本文中，报道了通过化学气相沉积生长制备具有高晶体质量的1D Sb 2 Se 3纳米线（NWs）。所获得的Sb 2 Se 3 NW具有三棱柱形态，长径比为2至200，并且在六重对称云母基板上可以实现三个主晶格取向。角分辨偏振拉曼光谱测量显示出Sb 2 Se 3的强各向异性NW，也被开发用来识别其晶体取向。此外，基于Sb 2 Se 3 NW的光电探测器表现出从可见光到NIR（400-900 nm）的宽光谱光响应范围。由于Sb 2 Se 3 NW的高结晶度，光电检测器获得约405的光电流开/关比，5100 mA W -1的响应度以及约32和5 ms的快速上升和下降时间。此外，由于Sb 2 Se 3 NW的各向异性结构，该器件表现出偏振相关的光响应。Sb 2 Se 3的高结晶度和优异的各向异性 NW，加上可控的准备工作，使其在构造多功能光电器件方面具有巨大的潜力。
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