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Thermoelectric Properties of Poly(3-hexylthiophene) (P3HT) Doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) by Vapor-Phase Infiltration
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-01-29 00:00:00 , DOI: 10.1021/acs.chemmater.7b04849 Eunhee Lim 1 , Kelly A. Peterson 1 , Gregory M. Su 2 , Michael L. Chabinyc 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-01-29 00:00:00 , DOI: 10.1021/acs.chemmater.7b04849 Eunhee Lim 1 , Kelly A. Peterson 1 , Gregory M. Su 2 , Michael L. Chabinyc 1
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Doping of thin films of semiconducting polymers provides control of their electrical conductivity and thermopower. The electrical conductivity of semiconducting polymers rises nonlinearly with the carrier concentration, and there is a lack of understanding of the detailed factors that lead to this behavior. We report a study of the morphological effects of doping on the electrical conductivity of poly(3-hexylthiophene) (P3HT) thin films doped with small molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). Resonant soft X-ray scattering shows that the morphology of films of P3HT is not strongly changed by infiltration of F4TCNQ from the vapor phase. We show that the local ordering of P3HT, the texture and form factor of crystallites, and the long-range connectivity of crystalline domains contribute to the electrical conductivity in thin films. The thermopower of films of P3HT doped with F4TCNQ from the vapor phase is not strongly enhanced relative to films doped from solution, but the electrical conductivity is significantly higher, improving the thermoelectric power factor.
中文翻译：
气相渗透法掺杂2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷（F 4 TCNQ）的聚（3-己基噻吩）（P3HT）的热电性质
半导体聚合物薄膜的掺杂提供了对其导电性和热功率的控制。半导体聚合物的电导率随载流子浓度的增加而非线性增加，并且对导致这种行为的详细因素缺乏了解。我们报告了掺杂对小分子2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷（ F 4 TCNQ）。共振软X射线散射表明P3HT膜的形态不会因F 4的渗透而强烈改变来自气相的TCNQ。我们表明，P3HT的局部有序性，微晶的质地和形状因数以及晶域的远程连接性有助于薄膜的电导率。相对于从溶液中掺杂的薄膜，从气相中掺杂F 4 TCNQ的P3HT薄膜的热功率没有得到显着提高，但是电导率明显更高，从而改善了热电功率因数。
更新日期：2018-01-29
中文翻译：
气相渗透法掺杂2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷（F 4 TCNQ）的聚（3-己基噻吩）（P3HT）的热电性质
半导体聚合物薄膜的掺杂提供了对其导电性和热功率的控制。半导体聚合物的电导率随载流子浓度的增加而非线性增加，并且对导致这种行为的详细因素缺乏了解。我们报告了掺杂对小分子2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷（ F 4 TCNQ）。共振软X射线散射表明P3HT膜的形态不会因F 4的渗透而强烈改变来自气相的TCNQ。我们表明，P3HT的局部有序性，微晶的质地和形状因数以及晶域的远程连接性有助于薄膜的电导率。相对于从溶液中掺杂的薄膜，从气相中掺杂F 4 TCNQ的P3HT薄膜的热功率没有得到显着提高，但是电导率明显更高，从而改善了热电功率因数。
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