Crested two-dimensional transistors.,Nature Nanotechnology

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Crested two-dimensional transistors.
Nature Nanotechnology ( IF 38.1 ) Pub Date : 2019-02-04 , DOI: 10.1038/s41565-019-0361-x
Tao Liu ₁ , Song Liu _{2,

3} , Kun-Hua Tu ₄ , Hennrik Schmidt ₂ , Leiqiang Chu _{1,

5} , Du Xiang ₅ , Jens Martin _{1,

2} , Goki Eda _{1,

2,

5} , Caroline A Ross ₄ , Slaven Garaj _{1,

2,

6}

Affiliation

Two-dimensional transition metal dichalcogenide (TMD) materials, albeit promising candidates for applications in electronics and optoelectronics1-3, are still limited by their low electrical mobility under ambient conditions. Efforts to improve device performance through a variety of routes, such as modification of contact metals4 and gate dielectrics5-9 or encapsulation in hexagonal boron nitride10, have yielded limited success at room temperature. Here, we report a large increase in the performance of TMD field-effect transistors operating under ambient conditions, achieved by engineering the substrate's surface morphology. For MoS2 transistors fabricated on crested substrates, we observed an almost two orders of magnitude increase in carrier mobility compared to standard devices, as well as very high saturation currents. The mechanical strain in TMDs has been predicted to boost carrier mobility11, and has been shown to influence the local bandgap12,13 and quantum emission properties14 of TMDs. With comprehensive investigation of different dielectric environments and morphologies, we demonstrate that the substrate's increased corrugation, with its resulting strain field, is the dominant factor driving performance enhancement. This strategy is universally valid for other semiconducting TMD materials, either p-doped or n-doped, opening them up for applications in heterogeneous integrated electronics.

中文翻译：

冠状二维晶体管。

二维过渡金属二硫化碳（TMD）材料尽管有望在电子和光电子学1-3中应用，但仍受到环境条件下低电迁移率的限制。通过各种途径来改善器件性能的努力，例如修改接触金属4和栅极电介质5-9或封装在六方氮化硼中10，在室温下取得的成功有限。在这里，我们报告了在环境条件下工作的TMD场效应晶体管的性能大幅提高，这是通过对基板的表面形态进行了设计而实现的。对于在波峰基板上制造的MoS2晶体管，我们观察到与标准器件相比，载流子迁移率提高了近两个数量级，而且饱和电流非常高。据预测，TMDs中的机械应变会提高载流子迁移率11，并且已显示出会影响TMDs的局部带隙12、13和量子发射特性14。通过对不同介电环境和形貌的全面研究，我们证明了基底波纹的增加以及由此产生的应变场是驱动性能提高的主要因素。该策略对p掺杂或n掺杂的其他半导体TMD材料普遍有效，从而为异质集成电子学中的应用打开了大门。我们证明了基底的波纹增加以及由此产生的应变场是驱动性能提高的主要因素。该策略对p掺杂或n掺杂的其他半导体TMD材料普遍有效，从而为异质集成电子学中的应用打开了大门。我们证明了基底的波纹增加以及由此产生的应变场是驱动性能提高的主要因素。该策略对p掺杂或n掺杂的其他半导体TMD材料普遍有效，从而为异质集成电子学中的应用打开了大门。

更新日期：2019-02-05

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